SiGe HBT BiCMOS technology for mixed signal RF applications

D. C. Ahlgren; G. Freeman; S. Subbanna; R. Groves; D. Greenberg; J. Malinowski; D. Nguyen-Ngoc; S. J. Jeng; K. Stein; K. Schonenberg; D. Kiesling; B. Martin; S. Wu; D. L. Harame; B. Meyerson

SiGe HBT BiCMOS technology for mixed signal RF applications

D. C. Ahlgren
, G. Freeman
, S. Subbanna
, R. Groves
, D. Greenberg
, J. Malinowski
, D. Nguyen-Ngoc
, S. J. Jeng
, K. Stein
, K. Schonenberg
, D. Kiesling
, B. Martin
, S. Wu
, D. L. Harame
, B. Meyerson

NY Creates Research Foundation

NY Creates

Global Foundries, Inc.

Research output: Contribution to conference › Paper › peer-review

56 Scopus citations

Abstract

We present results of IBM's Silicon Germanium HBT 0.35 μm L_eff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (f_t, f_max). These results demonstrate the potential of designing analog/mixed signal applications with `system-on-a-chip' functionality.

Original language	English
Pages	195-197
Number of pages	3
State	Published - 1997
Event	Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 28 1997 → Sep 30 1997

Conference

Conference	Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	09/28/97 → 09/30/97

Cite this

Ahlgren, D. C., Freeman, G., Subbanna, S., Groves, R., Greenberg, D., Malinowski, J., Nguyen-Ngoc, D., Jeng, S. J., Stein, K., Schonenberg, K., Kiesling, D., Martin, B., Wu, S., Harame, D. L., & Meyerson, B. (1997). SiGe HBT BiCMOS technology for mixed signal RF applications. 195-197. Paper presented at Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA.

@conference{e105ca16940d4e19affe9bec5f50dcc1,

title = "SiGe HBT BiCMOS technology for mixed signal RF applications",

abstract = "We present results of IBM's Silicon Germanium HBT 0.35 μm Leff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (ft, fmax). These results demonstrate the potential of designing analog/mixed signal applications with `system-on-a-chip' functionality.",

author = "Ahlgren, \{D. C.\} and G. Freeman and S. Subbanna and R. Groves and D. Greenberg and J. Malinowski and D. Nguyen-Ngoc and Jeng, \{S. J.\} and K. Stein and K. Schonenberg and D. Kiesling and B. Martin and S. Wu and Harame, \{D. L.\} and B. Meyerson",

year = "1997",

language = "English",

pages = "195--197",

note = "Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 28-09-1997 Through 30-09-1997",

}

Ahlgren, DC, Freeman, G, Subbanna, S, Groves, R, Greenberg, D, Malinowski, J, Nguyen-Ngoc, D, Jeng, SJ, Stein, K, Schonenberg, K, Kiesling, D, Martin, B, Wu, S, Harame, DL & Meyerson, B 1997, 'SiGe HBT BiCMOS technology for mixed signal RF applications', Paper presented at Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 09/28/97 - 09/30/97 pp. 195-197.

TY - CONF

T1 - SiGe HBT BiCMOS technology for mixed signal RF applications

AU - Ahlgren, D. C.

AU - Freeman, G.

AU - Subbanna, S.

AU - Groves, R.

AU - Greenberg, D.

AU - Malinowski, J.

AU - Nguyen-Ngoc, D.

AU - Jeng, S. J.

AU - Stein, K.

AU - Schonenberg, K.

AU - Kiesling, D.

AU - Martin, B.

AU - Wu, S.

AU - Harame, D. L.

AU - Meyerson, B.

PY - 1997

Y1 - 1997

N2 - We present results of IBM's Silicon Germanium HBT 0.35 μm Leff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (ft, fmax). These results demonstrate the potential of designing analog/mixed signal applications with `system-on-a-chip' functionality.

AB - We present results of IBM's Silicon Germanium HBT 0.35 μm Leff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (ft, fmax). These results demonstrate the potential of designing analog/mixed signal applications with `system-on-a-chip' functionality.

UR - https://www.scopus.com/pages/publications/0031353281

M3 - Paper

SP - 195

EP - 197

T2 - Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 28 September 1997 through 30 September 1997

ER -

SiGe HBT BiCMOS technology for mixed signal RF applications

Abstract

Conference

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