TY - GEN
T1 - Silicon carbide ultraviolet photodetector modeling, design and experiments
AU - Akturk, A.
AU - Dandin, M.
AU - Vert, A.
AU - Soloviev, S.
AU - Sandvik, P.
AU - Potbhare, S.
AU - Goldsman, N.
AU - Abshire, P.
PY - 2012
Y1 - 2012
N2 - This paper features our early modeling results on the development a Silicon Carbide photodetector with enhanced short ultraviolet (UVC) wavelength responsivity. Design parameters that are of interest, other than improved UVC responsivity, are the breakdown voltage and the noise level, namely the dark count rate in Geiger mode. In order to optimize the above-mentioned parameter space, we focus on the precise engineering of the doping profile across the device, as well as that of the layer thicknesses, and in addition, we propose the design of an APD surface that gives rise to minimal recombination of photo-generated electron-hole pairs, a feature which ultimately improves the short-wavelength response. Our design is guided by a custom-written device simulator which uses pre-fabricated silicon carbide APDs for calibration.
AB - This paper features our early modeling results on the development a Silicon Carbide photodetector with enhanced short ultraviolet (UVC) wavelength responsivity. Design parameters that are of interest, other than improved UVC responsivity, are the breakdown voltage and the noise level, namely the dark count rate in Geiger mode. In order to optimize the above-mentioned parameter space, we focus on the precise engineering of the doping profile across the device, as well as that of the layer thicknesses, and in addition, we propose the design of an APD surface that gives rise to minimal recombination of photo-generated electron-hole pairs, a feature which ultimately improves the short-wavelength response. Our design is guided by a custom-written device simulator which uses pre-fabricated silicon carbide APDs for calibration.
KW - Avalanche photodiodes (APD)
KW - Silicon carbide photodetectors
KW - Ultraviolet detectors
UR - https://www.scopus.com/pages/publications/84861375938
U2 - 10.4028/www.scientific.net/MSF.717-720.1199
DO - 10.4028/www.scientific.net/MSF.717-720.1199
M3 - Conference contribution
SN - 9783037854198
T3 - Materials Science Forum
SP - 1199
EP - 1202
BT - Silicon Carbide and Related Materials 2011, ICSCRM 2011
A2 - Devaty, Robert P.
A2 - Dudley, Michael
A2 - Chow, T. Paul
A2 - Neudeck, Philip G.
PB - Trans Tech Publications Ltd
T2 - 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Y2 - 11 September 2011 through 16 September 2011
ER -