Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS

S. Subbanna; L. Larson; G. Freeman; D. Ahlgren; K. Stein; C. Dickey; J. Mecke; A. Rincon; P. Bacon; R. Groves; M. Soyuer; D. Harame; J. Dunn; D. Rowe; W. Chon; D. Herman; B. Meyerson

doi:10.1109/CICC.2001.929842

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS

S. Subbanna
, L. Larson
, G. Freeman
, D. Ahlgren
, K. Stein
, C. Dickey
, J. Mecke
, A. Rincon
, P. Bacon
, R. Groves
, M. Soyuer
, D. Harame
, J. Dunn
, D. Rowe
, W. Chon
, D. Herman
, B. Meyerson

NY Creates Research Foundation

NY Creates

Global Foundries, Inc.
IBM
Sierra Monolithics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment.

Original language	English
Pages (from-to)	559-566
Number of pages	8
Journal	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.2001.929842
State	Published - 2001

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10.1109/CICC.2001.929842

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Subbanna, S., Larson, L., Freeman, G., Ahlgren, D., Stein, K., Dickey, C., Mecke, J., Rincon, A., Bacon, P., Groves, R., Soyuer, M., Harame, D., Dunn, J., Rowe, D., Chon, W., Herman, D., & Meyerson, B. (2001). Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS. Proceedings of the Custom Integrated Circuits Conference, 559-566. https://doi.org/10.1109/CICC.2001.929842

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abstract = "SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment.",

author = "S. Subbanna and L. Larson and G. Freeman and D. Ahlgren and K. Stein and C. Dickey and J. Mecke and A. Rincon and P. Bacon and R. Groves and M. Soyuer and D. Harame and J. Dunn and D. Rowe and W. Chon and D. Herman and B. Meyerson",

year = "2001",

doi = "10.1109/CICC.2001.929842",

language = "English",

pages = "559--566",

journal = "Proceedings of the Custom Integrated Circuits Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Subbanna, S, Larson, L, Freeman, G, Ahlgren, D, Stein, K, Dickey, C, Mecke, J, Rincon, A, Bacon, P, Groves, R, Soyuer, M, Harame, D, Dunn, J, Rowe, D, Chon, W, Herman, D & Meyerson, B 2001, 'Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS', Proceedings of the Custom Integrated Circuits Conference, pp. 559-566. https://doi.org/10.1109/CICC.2001.929842

TY - JOUR

T1 - Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS

AU - Subbanna, S.

AU - Larson, L.

AU - Freeman, G.

AU - Ahlgren, D.

AU - Stein, K.

AU - Dickey, C.

AU - Mecke, J.

AU - Rincon, A.

AU - Bacon, P.

AU - Groves, R.

AU - Soyuer, M.

AU - Harame, D.

AU - Dunn, J.

AU - Rowe, D.

AU - Chon, W.

AU - Herman, D.

AU - Meyerson, B.

PY - 2001

Y1 - 2001

N2 - SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment.

AB - SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment.

UR - https://www.scopus.com/pages/publications/0034835411

U2 - 10.1109/CICC.2001.929842

DO - 10.1109/CICC.2001.929842

M3 - Article

SN - 0886-5930

SP - 559

EP - 566

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

ER -

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS

Abstract

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