Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

Guofu Niu; John D. Cressler; Munir Shoga; Kay Jobe; Peter Chu; David L. Harame

doi:10.1109/23.903826

Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

Guofu Niu
, John D. Cressler
, Munir Shoga
, Kay Jobe
, Peter Chu
, David L. Harame

NY Creates Research Foundation

NY Creates

IEEE
Auburn University
Boeing

Research output: Contribution to journal › Conference article › peer-review

45 Scopus citations

Abstract

This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness.

Original language	English
Pages (from-to)	2682-2689
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	47
Issue number	6 III
DOIs	https://doi.org/10.1109/23.903826
State	Published - Dec 2000
Event	2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States Duration: Jul 24 2000 → Jul 28 2000

Keywords

Charge collection
Device simulation
HBT
SiGe
Single event effect

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10.1109/23.903826

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title = "Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs",

abstract = "This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness.",

keywords = "Charge collection, Device simulation, HBT, SiGe, Single event effect",

author = "Guofu Niu and Cressler, \{John D.\} and Munir Shoga and Kay Jobe and Peter Chu and Harame, \{David L.\}",

year = "2000",

month = dec,

doi = "10.1109/23.903826",

language = "English",

volume = "47",

pages = "2682--2689",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) ; Conference date: 24-07-2000 Through 28-07-2000",

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TY - JOUR

T1 - Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

AU - Niu, Guofu

AU - Cressler, John D.

AU - Shoga, Munir

AU - Jobe, Kay

AU - Chu, Peter

AU - Harame, David L.

PY - 2000/12

Y1 - 2000/12

N2 - This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness.

AB - This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness.

KW - Charge collection

KW - Device simulation

KW - HBT

KW - SiGe

KW - Single event effect

UR - https://www.scopus.com/pages/publications/0034451891

U2 - 10.1109/23.903826

DO - 10.1109/23.903826

M3 - Conference article

SN - 0018-9499

VL - 47

SP - 2682

EP - 2689

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 III

T2 - 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

Y2 - 24 July 2000 through 28 July 2000

ER -

Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

Abstract

Keywords

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