Single-crystal aluminum nitride substrate preparation from bulk crystals

J. Carlos Rojo; Leo J. Schowalter; Kenneth Morgan; Doru I. Florescu; Fred H. Pollak; Balaji Raghothamachar; Michael Dudley

doi:10.1557/proc-680-e2.7

Single-crystal aluminum nitride substrate preparation from bulk crystals

J. Carlos Rojo
, Leo J. Schowalter
, Kenneth Morgan
, Doru I. Florescu
, Fred H. Pollak
, Balaji Raghothamachar
, Michael Dudley

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Large (15mm diameter) single-crystal AlN boules have been prepared using sublimation-recondensation growth. X-ray topography shows that the dislocation density averages less than 10³ cm² in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.

Original language	English
Title of host publication	Wide-Bandgap Electronics
Publisher	Materials Research Society
Pages	1-7
Number of pages	7
ISBN (Print)	1558996168, 9781558996168
DOIs	https://doi.org/10.1557/proc-680-e2.7
State	Published - 2001
Event	2001 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	680

Conference

Conference	2001 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/16/01 → 04/20/01

Access to Document

10.1557/proc-680-e2.7

Cite this

@inproceedings{01cbea3df70f49a1a5b8f698c5fac95e,

title = "Single-crystal aluminum nitride substrate preparation from bulk crystals",

abstract = "Large (15mm diameter) single-crystal AlN boules have been prepared using sublimation-recondensation growth. X-ray topography shows that the dislocation density averages less than 103 cm2 in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.",

author = "Rojo, \{J. Carlos\} and Schowalter, \{Leo J.\} and Kenneth Morgan and Florescu, \{Doru I.\} and Pollak, \{Fred H.\} and Balaji Raghothamachar and Michael Dudley",

year = "2001",

doi = "10.1557/proc-680-e2.7",

language = "English",

isbn = "1558996168",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "1--7",

booktitle = "Wide-Bandgap Electronics",

note = "2001 MRS Spring Meeting ; Conference date: 16-04-2001 Through 20-04-2001",

}

Rojo, JC, Schowalter, LJ, Morgan, K, Florescu, DI, Pollak, FH, Raghothamachar, B & Dudley, M 2001, Single-crystal aluminum nitride substrate preparation from bulk crystals. in Wide-Bandgap Electronics. Materials Research Society Symposium Proceedings, vol. 680, Materials Research Society, pp. 1-7, 2001 MRS Spring Meeting, San Francisco, CA, United States, 04/16/01. https://doi.org/10.1557/proc-680-e2.7

TY - GEN

T1 - Single-crystal aluminum nitride substrate preparation from bulk crystals

AU - Rojo, J. Carlos

AU - Schowalter, Leo J.

AU - Morgan, Kenneth

AU - Florescu, Doru I.

AU - Pollak, Fred H.

AU - Raghothamachar, Balaji

AU - Dudley, Michael

PY - 2001

Y1 - 2001

N2 - Large (15mm diameter) single-crystal AlN boules have been prepared using sublimation-recondensation growth. X-ray topography shows that the dislocation density averages less than 103 cm2 in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.

AB - Large (15mm diameter) single-crystal AlN boules have been prepared using sublimation-recondensation growth. X-ray topography shows that the dislocation density averages less than 103 cm2 in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.

UR - https://www.scopus.com/pages/publications/34249874598

U2 - 10.1557/proc-680-e2.7

DO - 10.1557/proc-680-e2.7

M3 - Conference contribution

SN - 1558996168

SN - 9781558996168

T3 - Materials Research Society Symposium Proceedings

SP - 1

EP - 7

BT - Wide-Bandgap Electronics

PB - Materials Research Society

T2 - 2001 MRS Spring Meeting

Y2 - 16 April 2001 through 20 April 2001

ER -

Single-crystal aluminum nitride substrate preparation from bulk crystals

Abstract

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Conference

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