Single photon avalanche detectors in standard CMOS

Marc Dandin; Nicole Nelson; Valeri Saveliev; Honghao Ji; Pamela Abshire; Irving Weinberg

doi:10.1109/ICSENS.2007.4388466

Single photon avalanche detectors in standard CMOS

Marc Dandin
, Nicole Nelson
, Valeri Saveliev
, Honghao Ji
, Pamela Abshire
, Irving Weinberg

Electrical Engineering

Stony Brook University

University of Maryland, College Park
Fast Imaging Company

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

23 Scopus citations

Abstract

We report an improved design and successful demonstration of single photon avalanche diode (SPAD) detectors fabricated in a standard nwell 0.5 μm CMOS technology. The detectors are implemented as circular junctions between p+ and nwell regions. Two techniques are used to suppress perimeter breakdown: guard rings at the edges of the junctions, formed using lateral diffusion of adjacent nwell regions, and a poly-silicon control gate over the diffused guard rings and surrounding regions. The detectors exhibit a breakdown voltage of -16.85 V, ∼4 V higher than simple diode structures in the same technology. The detector exhibits a thermal event rate of 16000 counts/s at room temperature at an excess bias voltage of 1.15 V.

Original language	English
Title of host publication	The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Pages	585-588
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2007.4388466
State	Published - 2007
Event	6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States Duration: Oct 28 2007 → Oct 31 2007

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Country/Territory	United States
City	Atlanta, GA
Period	10/28/07 → 10/31/07

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10.1109/ICSENS.2007.4388466

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@inproceedings{02b0cc47c83e408a8bec8c4d4452904a,

title = "Single photon avalanche detectors in standard CMOS",

abstract = "We report an improved design and successful demonstration of single photon avalanche diode (SPAD) detectors fabricated in a standard nwell 0.5 μm CMOS technology. The detectors are implemented as circular junctions between p+ and nwell regions. Two techniques are used to suppress perimeter breakdown: guard rings at the edges of the junctions, formed using lateral diffusion of adjacent nwell regions, and a poly-silicon control gate over the diffused guard rings and surrounding regions. The detectors exhibit a breakdown voltage of -16.85 V, ∼4 V higher than simple diode structures in the same technology. The detector exhibits a thermal event rate of 16000 counts/s at room temperature at an excess bias voltage of 1.15 V.",

author = "Marc Dandin and Nicole Nelson and Valeri Saveliev and Honghao Ji and Pamela Abshire and Irving Weinberg",

year = "2007",

doi = "10.1109/ICSENS.2007.4388466",

language = "English",

isbn = "1424412617",

series = "Proceedings of IEEE Sensors",

pages = "585--588",

booktitle = "The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007",

note = "6th IEEE Conference on SENSORS, IEEE SENSORS 2007 ; Conference date: 28-10-2007 Through 31-10-2007",

}

TY - GEN

T1 - Single photon avalanche detectors in standard CMOS

AU - Dandin, Marc

AU - Nelson, Nicole

AU - Saveliev, Valeri

AU - Ji, Honghao

AU - Abshire, Pamela

AU - Weinberg, Irving

PY - 2007

Y1 - 2007

N2 - We report an improved design and successful demonstration of single photon avalanche diode (SPAD) detectors fabricated in a standard nwell 0.5 μm CMOS technology. The detectors are implemented as circular junctions between p+ and nwell regions. Two techniques are used to suppress perimeter breakdown: guard rings at the edges of the junctions, formed using lateral diffusion of adjacent nwell regions, and a poly-silicon control gate over the diffused guard rings and surrounding regions. The detectors exhibit a breakdown voltage of -16.85 V, ∼4 V higher than simple diode structures in the same technology. The detector exhibits a thermal event rate of 16000 counts/s at room temperature at an excess bias voltage of 1.15 V.

AB - We report an improved design and successful demonstration of single photon avalanche diode (SPAD) detectors fabricated in a standard nwell 0.5 μm CMOS technology. The detectors are implemented as circular junctions between p+ and nwell regions. Two techniques are used to suppress perimeter breakdown: guard rings at the edges of the junctions, formed using lateral diffusion of adjacent nwell regions, and a poly-silicon control gate over the diffused guard rings and surrounding regions. The detectors exhibit a breakdown voltage of -16.85 V, ∼4 V higher than simple diode structures in the same technology. The detector exhibits a thermal event rate of 16000 counts/s at room temperature at an excess bias voltage of 1.15 V.

UR - https://www.scopus.com/pages/publications/48349145384

U2 - 10.1109/ICSENS.2007.4388466

DO - 10.1109/ICSENS.2007.4388466

M3 - Conference contribution

SN - 1424412617

SN - 9781424412617

T3 - Proceedings of IEEE Sensors

SP - 585

EP - 588

BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007

T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007

Y2 - 28 October 2007 through 31 October 2007

ER -

Single photon avalanche detectors in standard CMOS

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