Single spatial mode room temperature operated 3.15m diode lasers

J. Chen; T. Hosoda; G. Kipshidze; L. Shterengas; G. Belenky; A. Soibel; C. Frez; S. Forouhar

doi:10.1049/el.2010.2894

Single spatial mode room temperature operated 3.15m diode lasers

J. Chen
, T. Hosoda
, G. Kipshidze
, L. Shterengas
, G. Belenky
, A. Soibel
, C. Frez
, S. Forouhar

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15m have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9mW of continuous-wave output power at 3.16m in a diffraction limited beam at 20°C. Devices operate in continuous-wave regime up to 40°C producing above 1mW of power at wavelength above 3.2m.

Original language	English
Pages (from-to)	367-368
Number of pages	2
Journal	Electronics Letters
Volume	46
Issue number	5
DOIs	https://doi.org/10.1049/el.2010.2894
State	Published - 2010

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10.1049/el.2010.2894

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title = "Single spatial mode room temperature operated 3.15m diode lasers",

abstract = "Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15m have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9mW of continuous-wave output power at 3.16m in a diffraction limited beam at 20°C. Devices operate in continuous-wave regime up to 40°C producing above 1mW of power at wavelength above 3.2m.",

author = "J. Chen and T. Hosoda and G. Kipshidze and L. Shterengas and G. Belenky and A. Soibel and C. Frez and S. Forouhar",

year = "2010",

doi = "10.1049/el.2010.2894",

language = "English",

volume = "46",

pages = "367--368",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Single spatial mode room temperature operated 3.15m diode lasers

AU - Chen, J.

AU - Hosoda, T.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Belenky, G.

AU - Soibel, A.

AU - Frez, C.

AU - Forouhar, S.

PY - 2010

Y1 - 2010

N2 - Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15m have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9mW of continuous-wave output power at 3.16m in a diffraction limited beam at 20°C. Devices operate in continuous-wave regime up to 40°C producing above 1mW of power at wavelength above 3.2m.

AB - Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15m have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9mW of continuous-wave output power at 3.16m in a diffraction limited beam at 20°C. Devices operate in continuous-wave regime up to 40°C producing above 1mW of power at wavelength above 3.2m.

UR - https://www.scopus.com/pages/publications/77949421673

U2 - 10.1049/el.2010.2894

DO - 10.1049/el.2010.2894

M3 - Article

SN - 0013-5194

VL - 46

SP - 367

EP - 368

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Single spatial mode room temperature operated 3.15m diode lasers

Abstract

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