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Smart Three Axis Compliant (STAC) interconnect: An ultra-high density MEMS based interconnect for wafer-level ultra-thin die stacking technology

  • State University of New York Binghamton University

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

This paper describes a novel Smart Three Axis Compliant (STAC) interconnect targeted to revolutionize chip-to-chip and chip-to-board high-density 3D integration for ultra-thin Si dies (≤75μm) at the wafer level. The STAC interconnect is a three dimensionally compliant interconnect which allows stacked ultra-thin chips to move or flex freely during operation with negligible stress imposed on the die. The paper will show that these interconnects can accommodate mismatches of board or package coefficient of thermal expansion (GTE) from chip CTE. STAG interconnects are fabricated using MEMS technologies to support super-fine-pitch (≈20μm pitch) interconnection. These interconnects are batch processed and die containing them can be stacked either at the wafer-level or at the die-level.

Original languageEnglish
Pages (from-to)1089-1093
Number of pages5
JournalProceedings - Electronic Components and Technology Conference
Volume2
StatePublished - 2005
Event55th Electronic Components and Technology Conference, ECTC - Lake Buena Vista, FL, United States
Duration: May 31 2005Jun 4 2005

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