Skip to main navigation Skip to search Skip to main content

Solder metallization interdiffusion in microelectronic interconnects

  • A. Zribi
  • , R. R. Chromik
  • , R. Presthus
  • , K. Teed
  • , L. Zavalij
  • , J. DeVita
  • , J. Tova
  • , Eric J. Cotts
  • , James A. Clum
  • , Robert Erich
  • , A. Primavera
  • , G. Westby
  • , R. J. Coyle
  • , G. M. Wenger
  • State University of New York Binghamton University
  • University of Detroit Mercy
  • Amkor Technology
  • Universal Instruments Corporation
  • Nokia

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

We investigated the growth of intermetallic compounds in Cu/Ni/Au/PbSn solder joints. The substrates that we investigated had been Au plated by one of two different techniques. The Au finish thicknesses ranged from 0.25 to 2.6 μm. After solder reflow, structural examinations using optical and electron microscopy of cross-sectioned solder joints revealed the growth of Ni3Sn4 at the solder/Ni interface after reflow. Solder joints with thicker layers of Au annealed in Ar gas at a temperature of 150°C for up to 450 h, displayed an appreciable growth of Au0.5Ni0.5Sn4 at the Ni3Sn4/solder interface. Previous investigators correlated growth of a Au-Sn alloy with the degradation of the mechanical properties of the solder joint. The determination of the stoichiometry of the Au0.5Ni0.5Sn4 phase provides some understanding of why this phase grew at the Ni3Sn4/solder interface, as Sn, Au and Ni are all readily available at this interface. The growth of this ternary alloy is also consistent with trends observed in the kinetics of formation of solder alloys.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalIEEE Transactions on Components and Packaging Technologies
Volume23
Issue number2
DOIs
StatePublished - 2000

Fingerprint

Dive into the research topics of 'Solder metallization interdiffusion in microelectronic interconnects'. Together they form a unique fingerprint.

Cite this