Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes

C. H. Li; G. Kioseoglou; O. M.J. Van 'T Erve; A. T. Hanbicki; B. T. Jonker; R. Mallory; M. Yasar; A. Petrou

doi:10.1063/1.1786366

Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes

C. H. Li
, G. Kioseoglou
, O. M.J. Van 'T Erve
, A. T. Hanbicki
, B. T. Jonker
, R. Mallory
, M. Yasar
, A. Petrou

Physics

University at Buffalo

Naval Research Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The dependence of electrical spin injection, which was from a Fe contact into a (110) spin-light-emitting diodes (LED), on interface and orientation was investigated. Molecular beam epitaxy was used for the growth of Fe/AlGaAs/GaAs LEDs and they were processed to form surface emitting structures. It was observed from the electroluminescence measurements that a 13% electron spin polarization was achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interfaces. The temperature dependence of the spin polarization was found to be dominated by the GaAS electron spin lifetime.

Original language	English
Pages (from-to)	1544-1546
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1786366
State	Published - Aug 30 2004

Access to Document

10.1063/1.1786366

Cite this

@article{71a309ff548d4b75b48b2de16c2ad1c4,

title = "Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes",

abstract = "The dependence of electrical spin injection, which was from a Fe contact into a (110) spin-light-emitting diodes (LED), on interface and orientation was investigated. Molecular beam epitaxy was used for the growth of Fe/AlGaAs/GaAs LEDs and they were processed to form surface emitting structures. It was observed from the electroluminescence measurements that a 13\% electron spin polarization was achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interfaces. The temperature dependence of the spin polarization was found to be dominated by the GaAS electron spin lifetime.",

author = "Li, \{C. H.\} and G. Kioseoglou and \{Van 'T Erve\}, \{O. M.J.\} and Hanbicki, \{A. T.\} and Jonker, \{B. T.\} and R. Mallory and M. Yasar and A. Petrou",

year = "2004",

month = aug,

day = "30",

doi = "10.1063/1.1786366",

language = "English",

volume = "85",

pages = "1544--1546",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Spin injection across (110) interfaces

T2 - Fe/GaAs(110) spin-light-emitting diodes

AU - Li, C. H.

AU - Kioseoglou, G.

AU - Van 'T Erve, O. M.J.

AU - Hanbicki, A. T.

AU - Jonker, B. T.

AU - Mallory, R.

AU - Yasar, M.

AU - Petrou, A.

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The dependence of electrical spin injection, which was from a Fe contact into a (110) spin-light-emitting diodes (LED), on interface and orientation was investigated. Molecular beam epitaxy was used for the growth of Fe/AlGaAs/GaAs LEDs and they were processed to form surface emitting structures. It was observed from the electroluminescence measurements that a 13% electron spin polarization was achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interfaces. The temperature dependence of the spin polarization was found to be dominated by the GaAS electron spin lifetime.

AB - The dependence of electrical spin injection, which was from a Fe contact into a (110) spin-light-emitting diodes (LED), on interface and orientation was investigated. Molecular beam epitaxy was used for the growth of Fe/AlGaAs/GaAs LEDs and they were processed to form surface emitting structures. It was observed from the electroluminescence measurements that a 13% electron spin polarization was achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interfaces. The temperature dependence of the spin polarization was found to be dominated by the GaAS electron spin lifetime.

UR - https://www.scopus.com/pages/publications/4944260770

U2 - 10.1063/1.1786366

DO - 10.1063/1.1786366

M3 - Article

SN - 0003-6951

VL - 85

SP - 1544

EP - 1546

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this