@inproceedings{0678aa285b6a46679caa78740b7c4a34,
title = "Stacking fault formation via 2D nucleation in PVT grown 4H-SiC",
abstract = "Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their fault vectors were determined by SWBXT to be 1/3<-1100>, 1/2<0001>, 1/6<-2203>, 1/12<4-403>, 1/12<- 4403>. HRTEM studies reveal their similarity in stacking sequences as limited numbers of bilayers of 6H polytype structure. Simulation results of the two partial dislocations associated with the stacking faults in SMBXT images reveal the opposite sign nature of their Burgers vectors. A mechanism for stacking fault formation via 2D nucleation is postulated.",
keywords = "HRTEM, Macrostep, Polytype, Stacking faults, X-ray topography",
author = "Wu, \{Fang Zhen\} and Wang, \{Huan Huan\} and Yu Yang and Guo, \{Jian Qiu\} and Balaji Raghothamachar and Michael Dudley and Mueller, \{Stephan G.\} and Gil Chung and Sanchez, \{Edward K.\} and Darren Hansen and Loboda, \{Mark J.\} and Zhang, \{Li Hua\} and Dong Su and Kim Kisslinger and Eric Stach",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.85",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "85--89",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}