Status and direction of communication technologies - SiGe BiCMOS and RFCMOS

Alvin J. Joseph; David L. Harame; Basanth Jagannathan; Doug Coolbaugh; David Ahlgren; John Magerlein; Louis Lanzerotti; Natalie Feilchenfeld; Stephen St Onge; James Dunn; Edward Nowak

doi:10.1109/JPROC.2005.852547

Status and direction of communication technologies - SiGe BiCMOS and RFCMOS

Alvin J. Joseph
, David L. Harame
, Basanth Jagannathan
, Doug Coolbaugh
, David Ahlgren
, John Magerlein
, Louis Lanzerotti
, Natalie Feilchenfeld
, Stephen St Onge
, James Dunn
, Edward Nowak

NY Creates Research Foundation

NY Creates

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.

Original language	English
Pages (from-to)	1539-1557
Number of pages	19
Journal	Proceedings of the IEEE
Volume	93
Issue number	9
DOIs	https://doi.org/10.1109/JPROC.2005.852547
State	Published - Sep 2005

Keywords

BiCMOS
Communication technology
RFCMOS
SiGe heterojunction bipolar transistor (HBT)

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10.1109/JPROC.2005.852547

Cite this

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abstract = "We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ({"}high performance{"}) tailored to high-frequency applications, SiGe BiCMOS WL ({"}cost performance{"}) tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.",

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AU - Joseph, Alvin J.

AU - Harame, David L.

AU - Jagannathan, Basanth

AU - Coolbaugh, Doug

AU - Ahlgren, David

AU - Magerlein, John

AU - Lanzerotti, Louis

AU - Feilchenfeld, Natalie

AU - Onge, Stephen St

AU - Dunn, James

AU - Nowak, Edward

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AB - We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.

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KW - Communication technology

KW - RFCMOS

KW - SiGe heterojunction bipolar transistor (HBT)

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JO - Proceedings of the IEEE

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Status and direction of communication technologies - SiGe BiCMOS and RFCMOS

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Keywords

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