Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

K. Kamath; H. Jiang; D. Klotzkin; J. Phillips; T. Sosnowski; T. Norris; J. Singh; P. Bhattacharya

doi:10.1109/ISCS.1998.711731

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

K. Kamath
, H. Jiang
, D. Klotzkin
, J. Phillips
, T. Sosnowski
, T. Norris
, J. Singh
, P. Bhattacharya

Electrical and Computer Eng

Binghamton University

University of Michigan, Ann Arbor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The strain tensor in pyramidal Ga(In)As/GaAs self-assembled quantum dots is characterized in detail using a valence force field model and is applied to an eight-band k·p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction band spectra using the effective mass approach are shown to have serious errors. The energy difference between the ground and excited states obtained from both eight-band calculations and experimental results indicates phonon bottleneck in these dots which is confirmed by a relatively simple high frequency electrical impedance measurements on quantum dot lasers. The electron capture times of 30-40 ps are obtained compared to 2-5ps in SCH quantum well lasers and 1 ps in tunneling injection lasers, and the modulation band width is found to be limited by the capture times. The time resolved photoluminescence measurements gave decay time constants of ∼700 ps and ∼200-250 ps for the ground and excited state transitions, respectively.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	525-529
Number of pages	5
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711731
State	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: Sep 8 1997 → Sep 11 1997

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	09/8/97 → 09/11/97

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10.1109/ISCS.1998.711731

Cite this

Kamath, K., Jiang, H., Klotzkin, D., Phillips, J., Sosnowski, T., Norris, T., Singh, J., & Bhattacharya, P. (1997). Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 525-529). Article 711731 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711731

Kamath, K. ; Jiang, H. ; Klotzkin, D. et al. / Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 525-529 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{ffe0c5f5cf284ce49d41e1c39f3832d1,

title = "Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots",

abstract = "The strain tensor in pyramidal Ga(In)As/GaAs self-assembled quantum dots is characterized in detail using a valence force field model and is applied to an eight-band k·p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction band spectra using the effective mass approach are shown to have serious errors. The energy difference between the ground and excited states obtained from both eight-band calculations and experimental results indicates phonon bottleneck in these dots which is confirmed by a relatively simple high frequency electrical impedance measurements on quantum dot lasers. The electron capture times of 30-40 ps are obtained compared to 2-5ps in SCH quantum well lasers and 1 ps in tunneling injection lasers, and the modulation band width is found to be limited by the capture times. The time resolved photoluminescence measurements gave decay time constants of ∼700 ps and ∼200-250 ps for the ground and excited state transitions, respectively.",

author = "K. Kamath and H. Jiang and D. Klotzkin and J. Phillips and T. Sosnowski and T. Norris and J. Singh and P. Bhattacharya",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711731",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Kamath, K, Jiang, H, Klotzkin, D, Phillips, J, Sosnowski, T, Norris, T, Singh, J & Bhattacharya, P 1997, Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711731, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 525-529, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 09/8/97. https://doi.org/10.1109/ISCS.1998.711731

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots. / Kamath, K.; Jiang, H.; Klotzkin, D. et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 525-529 711731 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

AU - Kamath, K.

AU - Jiang, H.

AU - Klotzkin, D.

AU - Phillips, J.

AU - Sosnowski, T.

AU - Norris, T.

AU - Singh, J.

AU - Bhattacharya, P.

PY - 1997

Y1 - 1997

N2 - The strain tensor in pyramidal Ga(In)As/GaAs self-assembled quantum dots is characterized in detail using a valence force field model and is applied to an eight-band k·p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction band spectra using the effective mass approach are shown to have serious errors. The energy difference between the ground and excited states obtained from both eight-band calculations and experimental results indicates phonon bottleneck in these dots which is confirmed by a relatively simple high frequency electrical impedance measurements on quantum dot lasers. The electron capture times of 30-40 ps are obtained compared to 2-5ps in SCH quantum well lasers and 1 ps in tunneling injection lasers, and the modulation band width is found to be limited by the capture times. The time resolved photoluminescence measurements gave decay time constants of ∼700 ps and ∼200-250 ps for the ground and excited state transitions, respectively.

AB - The strain tensor in pyramidal Ga(In)As/GaAs self-assembled quantum dots is characterized in detail using a valence force field model and is applied to an eight-band k·p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction band spectra using the effective mass approach are shown to have serious errors. The energy difference between the ground and excited states obtained from both eight-band calculations and experimental results indicates phonon bottleneck in these dots which is confirmed by a relatively simple high frequency electrical impedance measurements on quantum dot lasers. The electron capture times of 30-40 ps are obtained compared to 2-5ps in SCH quantum well lasers and 1 ps in tunneling injection lasers, and the modulation band width is found to be limited by the capture times. The time resolved photoluminescence measurements gave decay time constants of ∼700 ps and ∼200-250 ps for the ground and excited state transitions, respectively.

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U2 - 10.1109/ISCS.1998.711731

DO - 10.1109/ISCS.1998.711731

M3 - Conference contribution

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 525

EP - 529

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -

Kamath K, Jiang H, Klotzkin D, Phillips J, Sosnowski T, Norris T et al. Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 525-529. 711731. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711731

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

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