@inproceedings{30077dce883b41189997157e07eb1509,
title = "Structural and electrical properties of BaTiO3 thin films grown on p-Si substrates with different devices designs",
abstract = "RF magnetron sputtering of BaTiO3 on(100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTiO3 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystalline, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV-1cm-2.",
author = "Chang, \{L. H.\} and Jia, \{O. X.\} and Anderson, \{W. A.\}",
year = "1994",
language = "English",
isbn = "1558992170",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "501--506",
editor = "Peter Borgesen and Jensen, \{Klavs F.\} and Pollak, \{Roger A.\}",
booktitle = "Interface Control of Electrical, Chemical, and Mechanical Properties",
note = "Proceedings of the Fall 1993 MRS Meeting ; Conference date: 29-11-1993 Through 03-12-1993",
}