Submillimeter wave generation and noise in InP diodes

V. Mitin; V. Gruzinskis; E. Starikov; P. Shiktorov

doi:10.1063/1.356449

Submillimeter wave generation and noise in InP diodes

V. Mitin
, V. Gruzinskis
, E. Starikov
, P. Shiktorov

Department of Electrical Engineering

University at Buffalo

Wayne State University
Center for Physical Sciences and Technology

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

High-frequency (350-750 GHz) generation in submicrometer InP diodes is investigated by modified hydrodynamic and Monte Carlo particle (MCP) techniques. The noise power spectral density P_n in the diode loaded by resistor R and generation spectra P_g in a series resonant RL circuit are calculated using the MCP technique. It is shown that at the biases above the generation threshold the P_n has a peak at the frequency f _max which corresponds to the highest generation frequency at the given R. The excess noise arises in the frequency region where the real part of diode impedance Re Z has negative values. At the bias below the generation threshold (i.e., when Re Z is positive over entire frequency range) the P _n(f) has the usual Lorenzian shape. The MCP simulation of P _g for 0.25-μm-length diode shows the Gaussian shape of the spectra at frequencies 517 and 622 GHz. The P_g broadening at higher frequencies is the result of interaction between the self-oscillations at frequency f_max and circuit-driven oscillations.

Original language	English
Pages (from-to)	935-941
Number of pages	7
Journal	Journal of Applied Physics
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.356449
State	Published - 1994

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title = "Submillimeter wave generation and noise in InP diodes",

abstract = "High-frequency (350-750 GHz) generation in submicrometer InP diodes is investigated by modified hydrodynamic and Monte Carlo particle (MCP) techniques. The noise power spectral density Pn in the diode loaded by resistor R and generation spectra Pg in a series resonant RL circuit are calculated using the MCP technique. It is shown that at the biases above the generation threshold the Pn has a peak at the frequency f max which corresponds to the highest generation frequency at the given R. The excess noise arises in the frequency region where the real part of diode impedance Re Z has negative values. At the bias below the generation threshold (i.e., when Re Z is positive over entire frequency range) the P n(f) has the usual Lorenzian shape. The MCP simulation of P g for 0.25-μm-length diode shows the Gaussian shape of the spectra at frequencies 517 and 622 GHz. The Pg broadening at higher frequencies is the result of interaction between the self-oscillations at frequency fmax and circuit-driven oscillations.",

author = "V. Mitin and V. Gruzinskis and E. Starikov and P. Shiktorov",

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doi = "10.1063/1.356449",

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T1 - Submillimeter wave generation and noise in InP diodes

AU - Mitin, V.

AU - Gruzinskis, V.

AU - Starikov, E.

AU - Shiktorov, P.

PY - 1994

Y1 - 1994

N2 - High-frequency (350-750 GHz) generation in submicrometer InP diodes is investigated by modified hydrodynamic and Monte Carlo particle (MCP) techniques. The noise power spectral density Pn in the diode loaded by resistor R and generation spectra Pg in a series resonant RL circuit are calculated using the MCP technique. It is shown that at the biases above the generation threshold the Pn has a peak at the frequency f max which corresponds to the highest generation frequency at the given R. The excess noise arises in the frequency region where the real part of diode impedance Re Z has negative values. At the bias below the generation threshold (i.e., when Re Z is positive over entire frequency range) the P n(f) has the usual Lorenzian shape. The MCP simulation of P g for 0.25-μm-length diode shows the Gaussian shape of the spectra at frequencies 517 and 622 GHz. The Pg broadening at higher frequencies is the result of interaction between the self-oscillations at frequency fmax and circuit-driven oscillations.

AB - High-frequency (350-750 GHz) generation in submicrometer InP diodes is investigated by modified hydrodynamic and Monte Carlo particle (MCP) techniques. The noise power spectral density Pn in the diode loaded by resistor R and generation spectra Pg in a series resonant RL circuit are calculated using the MCP technique. It is shown that at the biases above the generation threshold the Pn has a peak at the frequency f max which corresponds to the highest generation frequency at the given R. The excess noise arises in the frequency region where the real part of diode impedance Re Z has negative values. At the bias below the generation threshold (i.e., when Re Z is positive over entire frequency range) the P n(f) has the usual Lorenzian shape. The MCP simulation of P g for 0.25-μm-length diode shows the Gaussian shape of the spectra at frequencies 517 and 622 GHz. The Pg broadening at higher frequencies is the result of interaction between the self-oscillations at frequency fmax and circuit-driven oscillations.

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U2 - 10.1063/1.356449

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Submillimeter wave generation and noise in InP diodes

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