Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs

Jun Pan; Guofu Niu; Jin Tang; Yun Shi; Alvin J. Joseph; David L. Harame

doi:10.1109/LED.2003.820647

Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs

Jun Pan
, Guofu Niu
, Jin Tang
, Yun Shi
, Alvin J. Joseph
, David L. Harame

NY Creates Research Foundation

NY Creates

Auburn University
Global Foundries, Inc.

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA/μm² on SiGe HBTs featuring 120 GHz peak f_T which occurs at J_C about 7 mA/μm². Implications for circuit applications are also discussed.

Original language	English
Pages (from-to)	736-738
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/LED.2003.820647
State	Published - Dec 2003

Keywords

Avalanche multiplication
Breakdown voltage
Impact ionization
Photo effect
SiGe HBT

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10.1109/LED.2003.820647

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@article{1b80d389e782456098eacb5b116a4bd4,

title = "Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs",

abstract = "A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA/μm2 on SiGe HBTs featuring 120 GHz peak fT which occurs at JC about 7 mA/μm2. Implications for circuit applications are also discussed.",

keywords = "Avalanche multiplication, Breakdown voltage, Impact ionization, Photo effect, SiGe HBT",

author = "Jun Pan and Guofu Niu and Jin Tang and Yun Shi and Joseph, \{Alvin J.\} and Harame, \{David L.\}",

year = "2003",

month = dec,

doi = "10.1109/LED.2003.820647",

language = "English",

volume = "24",

pages = "736--738",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs

AU - Pan, Jun

AU - Niu, Guofu

AU - Tang, Jin

AU - Shi, Yun

AU - Joseph, Alvin J.

AU - Harame, David L.

PY - 2003/12

Y1 - 2003/12

N2 - A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA/μm2 on SiGe HBTs featuring 120 GHz peak fT which occurs at JC about 7 mA/μm2. Implications for circuit applications are also discussed.

AB - A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA/μm2 on SiGe HBTs featuring 120 GHz peak fT which occurs at JC about 7 mA/μm2. Implications for circuit applications are also discussed.

KW - Avalanche multiplication

KW - Breakdown voltage

KW - Impact ionization

KW - Photo effect

KW - SiGe HBT

UR - https://www.scopus.com/pages/publications/0346500851

U2 - 10.1109/LED.2003.820647

DO - 10.1109/LED.2003.820647

M3 - Article

SN - 0741-3106

VL - 24

SP - 736

EP - 738

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs

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Keywords

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