Surface recombination of deuterium implanted into SS304

P. Børgesen; B. M.U. Scherzer; W. Möller

doi:10.1016/0168-583X(86)90359-9

Surface recombination of deuterium implanted into SS304

P. Børgesen
, B. M.U. Scherzer
, W. Möller

School of Sys Sci Ind Engr

Binghamton University

Max Planck Institute for Plasma Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The surface recombination rate coefficient for deuterium implanted into oxide free SS304 was determined by two complementary methods at temperatures between 401 K and 1055 K: (i) at high temperatures from the time constant of the reemission transient and (ii) at lower temperatures from the steady-state permeation rate through thin foils. The validity of the diffusion coefficient assumed for data evaluation and the effects of uncertainties herein, are discussed. The results were found to be totally insensitive to variations of residual H₂- and H₂O-gas pressures by several orders of magnitude.

Original language	English
Pages (from-to)	540-545
Number of pages	6
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	15
Issue number	1-6
DOIs	https://doi.org/10.1016/0168-583X(86)90359-9
State	Published - Apr 1 1986

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abstract = "The surface recombination rate coefficient for deuterium implanted into oxide free SS304 was determined by two complementary methods at temperatures between 401 K and 1055 K: (i) at high temperatures from the time constant of the reemission transient and (ii) at lower temperatures from the steady-state permeation rate through thin foils. The validity of the diffusion coefficient assumed for data evaluation and the effects of uncertainties herein, are discussed. The results were found to be totally insensitive to variations of residual H2- and H2O-gas pressures by several orders of magnitude.",

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T1 - Surface recombination of deuterium implanted into SS304

AU - Børgesen, P.

AU - Scherzer, B. M.U.

AU - Möller, W.

PY - 1986/4/1

Y1 - 1986/4/1

N2 - The surface recombination rate coefficient for deuterium implanted into oxide free SS304 was determined by two complementary methods at temperatures between 401 K and 1055 K: (i) at high temperatures from the time constant of the reemission transient and (ii) at lower temperatures from the steady-state permeation rate through thin foils. The validity of the diffusion coefficient assumed for data evaluation and the effects of uncertainties herein, are discussed. The results were found to be totally insensitive to variations of residual H2- and H2O-gas pressures by several orders of magnitude.

AB - The surface recombination rate coefficient for deuterium implanted into oxide free SS304 was determined by two complementary methods at temperatures between 401 K and 1055 K: (i) at high temperatures from the time constant of the reemission transient and (ii) at lower temperatures from the steady-state permeation rate through thin foils. The validity of the diffusion coefficient assumed for data evaluation and the effects of uncertainties herein, are discussed. The results were found to be totally insensitive to variations of residual H2- and H2O-gas pressures by several orders of magnitude.

UR - https://www.scopus.com/pages/publications/0022040313

U2 - 10.1016/0168-583X(86)90359-9

DO - 10.1016/0168-583X(86)90359-9

M3 - Article

SN - 0168-583X

VL - 15

SP - 540

EP - 545

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-6

ER -

Surface recombination of deuterium implanted into SS304

Abstract

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