Synchrotron x-ray topographic characterization of defects in InP bulk crystals

G. Dhanaraj; B. Raghothamachar; J. Bai; H. Chung; M. Dudley

doi:10.1109/ICIPRM.2005.1517578

Synchrotron x-ray topographic characterization of defects in InP bulk crystals

G. Dhanaraj
, B. Raghothamachar
, J. Bai
, H. Chung
, M. Dudley

Materials Science and Engineering

Stony Brook University

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities.

Original language	English
Title of host publication	2005 International Conference on Indium Phosphide and Related Materials
Pages	643-648
Number of pages	6
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517578
State	Published - 2005
Event	2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom Duration: May 8 2005 → May 12 2005

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2005

Conference

Conference	2005 International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow, Scotland
Period	05/8/05 → 05/12/05

Access to Document

10.1109/ICIPRM.2005.1517578

Cite this

Dhanaraj, G., Raghothamachar, B., Bai, J., Chung, H., & Dudley, M. (2005). Synchrotron x-ray topographic characterization of defects in InP bulk crystals. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 643-648). Article 1517578 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517578

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title = "Synchrotron x-ray topographic characterization of defects in InP bulk crystals",

abstract = "Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities.",

author = "G. Dhanaraj and B. Raghothamachar and J. Bai and H. Chung and M. Dudley",

year = "2005",

doi = "10.1109/ICIPRM.2005.1517578",

language = "English",

isbn = "0780388917",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "643--648",

booktitle = "2005 International Conference on Indium Phosphide and Related Materials",

note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

}

Dhanaraj, G, Raghothamachar, B, Bai, J, Chung, H & Dudley, M 2005, Synchrotron x-ray topographic characterization of defects in InP bulk crystals. in 2005 International Conference on Indium Phosphide and Related Materials., 1517578, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 643-648, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 05/8/05. https://doi.org/10.1109/ICIPRM.2005.1517578

Synchrotron x-ray topographic characterization of defects in InP bulk crystals. / Dhanaraj, G.; Raghothamachar, B.; Bai, J. et al.
2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 643-648 1517578 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Synchrotron x-ray topographic characterization of defects in InP bulk crystals

AU - Dhanaraj, G.

AU - Raghothamachar, B.

AU - Bai, J.

AU - Chung, H.

AU - Dudley, M.

PY - 2005

Y1 - 2005

N2 - Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities.

AB - Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities.

UR - https://www.scopus.com/pages/publications/33747389385

U2 - 10.1109/ICIPRM.2005.1517578

DO - 10.1109/ICIPRM.2005.1517578

M3 - Conference contribution

SN - 0780388917

SN - 9780780388918

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 643

EP - 648

BT - 2005 International Conference on Indium Phosphide and Related Materials

T2 - 2005 International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

Synchrotron x-ray topographic characterization of defects in InP bulk crystals

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