Abstract
Monoclinic potassium rare-earth double tungstates [KRE(WO 4) 2, RE = Y, Lu, Yb; KREW] are well suited as hosts for active lanthanide ion (Ln 3+) dopants for diode-pumped solid-state lasers, with particular interest in thin-disk laser configurations when they are grown as thin films. Using synchrotron white- beam x-ray topography, we have imaged defects and strain in top-seeded solution-grown (TSSG) bulk substrates of different rare-earth tungstates as well as within Yb 3+- and Tm 3+-doped epitaxies for thin-disk laser applications grown on these substrates by liquid-phase epitaxy. Higher structural stress in Yb:KYW/KYW epitaxies compared with Yb:KLuW/KLuW epitaxies is found to lower efficiency in laser operation. The quality of Tm:KLuW/KLuW epitaxial films is sensitive to doping level, film thickness, and growth rate. Inhomogeneous stresses within the layers are dominated by lattice-mismatch effects rather than by crystallographic anisotropy.
| Original language | English |
|---|---|
| Pages (from-to) | 823-829 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 39 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2010 |
Keywords
- Crystal growth
- Defects
- Liquid-phase epitaxy
- Monoclinic double tungstates
- Strain
- Thin-disk lasers
- Top-seeded solution growth
- X-ray topography
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