Synthesis and characterization of visible light absorbing (GaN) _1-x(ZnO)_x semiconductor nanorods

Although the (GaN)_1-x(ZnO)_x solid solution is one of the most effective systems for driving overall solar water splitting with visible light, its quantum yield for overall water splitting using visible light photons has not yet reached ten percent. Understanding and controlling the nanoscale morphology of this system may allow its overall conversion efficiency to be raised to technologically relevant levels. We describe the use a Ga ₂O₃(ZnO)₁₆ precursor phase in the synthesis of this phase which naturally results in the production of arrays of nanorods with favorable diameters (∼100 nm) and band gaps (∼2.5 eV). Substantial absorption within the band gap is observed, part of which is found to follow the E^-3 scaling characteristic of free carriers scattered by ionized impurity sites. Compositional analysis suggests that a substantial quantity of cation vacancies (∼3%) may be present in some samples. The typical nanorod growth direction and dominant {101Ì...1} facet for powders in this system have been identified through electron microscopy methods, leading to the conclusion that polarity may play an important role in the high photoactivity of this family of wurtzite semiconductors.