Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition

P. Tiwari; X. D. Wu; S. R. Foltyn; Q. X. Jia; I. H. Campbell; P. A. Arendt; R. E. Muenchausen; D. E. Peterson; T. E. Mitchell; J. Narayan

doi:10.1063/1.112608

Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition

P. Tiwari
, X. D. Wu
, S. R. Foltyn
, Q. X. Jia
, I. H. Campbell
, P. A. Arendt
, R. E. Muenchausen
, D. E. Peterson
, T. E. Mitchell
, J. Narayan

Department of Materials Design and Innovation

University at Buffalo

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.

Original language	English
Pages (from-to)	2693-2695
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	21
DOIs	https://doi.org/10.1063/1.112608
State	Published - 1994

Access to Document

10.1063/1.112608

Cite this

@article{ed272b5fd9b749cc971feec724cdeaac,

title = "Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition",

abstract = "High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39\% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.",

author = "P. Tiwari and Wu, \{X. D.\} and Foltyn, \{S. R.\} and Jia, \{Q. X.\} and Campbell, \{I. H.\} and Arendt, \{P. A.\} and Muenchausen, \{R. E.\} and Peterson, \{D. E.\} and Mitchell, \{T. E.\} and J. Narayan",

year = "1994",

doi = "10.1063/1.112608",

language = "English",

volume = "65",

pages = "2693--2695",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition

AU - Tiwari, P.

AU - Wu, X. D.

AU - Foltyn, S. R.

AU - Jia, Q. X.

AU - Campbell, I. H.

AU - Arendt, P. A.

AU - Muenchausen, R. E.

AU - Peterson, D. E.

AU - Mitchell, T. E.

AU - Narayan, J.

PY - 1994

Y1 - 1994

N2 - High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.

AB - High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode.

UR - https://www.scopus.com/pages/publications/0028548443

U2 - 10.1063/1.112608

DO - 10.1063/1.112608

M3 - Article

SN - 0003-6951

VL - 65

SP - 2693

EP - 2695

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this