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Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq3 in OLED

  • Haichuan Mu
  • , David Klotzkin
  • , Ajith De Silva
  • , Hans Peter Wagner
  • , Dan White
  • , Buck Sharpton
  • University of Alaska Fairbanks
  • University of Cincinnati

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq3(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

Original languageEnglish
Article number235109
JournalJournal of Physics D: Applied Physics
Volume41
Issue number23
DOIs
StatePublished - 2008

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