Temperature dependence of the electrical performance of SrBi2Ta2O9 for non-volatile memory applications

D. J. Taylor; R. E. Jones; P. Y. Chu; P. Zurcher; B. White; S. Zafar; S. J. Gillespie

Temperature dependence of the electrical performance of SrBi₂Ta₂O₉ for non-volatile memory applications

D. J. Taylor
, R. E. Jones
, P. Y. Chu
, P. Zurcher
, B. White
, S. Zafar
, S. J. Gillespie

Physics

Binghamton University

Motorola

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2P_r), the non-volatile polarization (P_nv), and the coercive field (E_c) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2P_r and P_nv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).

Original language	English
Pages	55-58
Number of pages	4
State	Published - 1996
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Conference

Conference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	08/18/96 → 08/21/96

Cite this

Taylor, D. J., Jones, R. E., Chu, P. Y., Zurcher, P., White, B., Zafar, S., & Gillespie, S. J. (1996). Temperature dependence of the electrical performance of SrBi₂Ta₂O₉ for non-volatile memory applications. 55-58. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

@conference{c6dd748960234e7ca37187211204b28e,

title = "Temperature dependence of the electrical performance of SrBi2Ta2O9 for non-volatile memory applications",

abstract = "Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and Pnv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).",

author = "Taylor, \{D. J.\} and Jones, \{R. E.\} and Chu, \{P. Y.\} and P. Zurcher and B. White and S. Zafar and Gillespie, \{S. J.\}",

year = "1996",

language = "English",

pages = "55--58",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Taylor, DJ, Jones, RE, Chu, PY, Zurcher, P, White, B, Zafar, S & Gillespie, SJ 1996, 'Temperature dependence of the electrical performance of SrBi₂Ta₂O₉ for non-volatile memory applications', Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 08/18/96 - 08/21/96 pp. 55-58.

Temperature dependence of the electrical performance of SrBi₂Ta₂O₉ for non-volatile memory applications. / Taylor, D. J.; Jones, R. E.; Chu, P. Y. et al.
1996. 55-58 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Temperature dependence of the electrical performance of SrBi2Ta2O9 for non-volatile memory applications

AU - Taylor, D. J.

AU - Jones, R. E.

AU - Chu, P. Y.

AU - Zurcher, P.

AU - White, B.

AU - Zafar, S.

AU - Gillespie, S. J.

PY - 1996

Y1 - 1996

N2 - Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and Pnv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).

AB - Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and Pnv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).

UR - https://www.scopus.com/pages/publications/0030370983

M3 - Paper

SP - 55

EP - 58

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Temperature dependence of the electrical performance of SrBi₂Ta₂O₉ for non-volatile memory applications

Abstract

Conference

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