Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

Monalisa Mazumder; Theodorian Borca-Tasciuc; Sean C. Teehan; Emilio Stinzianni; Harry Efstathiadis; Slowa Solovyov

doi:10.1063/1.3337093

Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

Monalisa Mazumder
, Theodorian Borca-Tasciuc
, Sean C. Teehan
, Emilio Stinzianni
, Harry Efstathiadis
, Slowa Solovyov

Nanoscale Science and Engineering

University at Albany

Rensselaer Polytechnic Institute
SUNY Albany
Brookhaven National Laboratory Condensed Matter Physics and Materials Science Department

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.

Original language	English
Article number	093103
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3337093
State	Published - 2010

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10.1063/1.3337093

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title = "Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films",

abstract = "The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.",

author = "Monalisa Mazumder and Theodorian Borca-Tasciuc and Teehan, \{Sean C.\} and Emilio Stinzianni and Harry Efstathiadis and Slowa Solovyov",

year = "2010",

doi = "10.1063/1.3337093",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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T1 - Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

AU - Mazumder, Monalisa

AU - Borca-Tasciuc, Theodorian

AU - Teehan, Sean C.

AU - Stinzianni, Emilio

AU - Efstathiadis, Harry

AU - Solovyov, Slowa

PY - 2010

Y1 - 2010

N2 - The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.

AB - The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.

UR - https://www.scopus.com/pages/publications/77949393750

U2 - 10.1063/1.3337093

DO - 10.1063/1.3337093

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093103

ER -

Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

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