The effect of different oxygen exchange layers on TaO x based RRAM devices

Zahiruddin Alamgir; Joshua Holt; Karsten Beckmann; Nathaniel C. Cady

doi:10.1088/1361-6641/aa9a8f

The effect of different oxygen exchange layers on TaO _x based RRAM devices

Zahiruddin Alamgir
, Joshua Holt
, Karsten Beckmann
, Nathaniel C. Cady

NY Creates, University at Albany

SUNY Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaO_x based memory cells. It was found that the forming voltage, SET-RESET voltage, R _off, R _on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

Original language	English
Article number	015014
Journal	Semiconductor Science and Technology
Volume	33
Issue number	1
DOIs	https://doi.org/10.1088/1361-6641/aa9a8f
State	Published - Jan 2018

Keywords

R
R
RRAM
SET-RESET
electronegativity
forming voltage
oxygen exchange layer (OEL)

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10.1088/1361-6641/aa9a8f

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title = "The effect of different oxygen exchange layers on TaO x based RRAM devices",

abstract = "In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaOx based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.",

keywords = "R, R, RRAM, SET-RESET, electronegativity, forming voltage, oxygen exchange layer (OEL)",

author = "Zahiruddin Alamgir and Joshua Holt and Karsten Beckmann and Cady, \{Nathaniel C.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

year = "2018",

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doi = "10.1088/1361-6641/aa9a8f",

language = "English",

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AU - Alamgir, Zahiruddin

AU - Holt, Joshua

AU - Beckmann, Karsten

AU - Cady, Nathaniel C.

PY - 2018/1

Y1 - 2018/1

N2 - In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaOx based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

AB - In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaOx based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

KW - R

KW - RRAM

KW - SET-RESET

KW - electronegativity

KW - forming voltage

KW - oxygen exchange layer (OEL)

UR - https://www.scopus.com/pages/publications/85038609353

U2 - 10.1088/1361-6641/aa9a8f

DO - 10.1088/1361-6641/aa9a8f

M3 - Article

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015014

ER -

The effect of different oxygen exchange layers on TaO _x based RRAM devices

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Keywords

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