The enthalpy of formation of thin film titanium disilicide

R. J. Kasica; E. J. Cotts

doi:10.1063/1.365930

The enthalpy of formation of thin film titanium disilicide

R. J. Kasica
, E. J. Cotts

Physics

Binghamton University

State University of New York Binghamton University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analysis of our data we have calculated the enthalpy of formation to be ΔK_f= -62±5 kJ/mol for the reaction, a-Si+Ti→C49-TiSi₂ and have subsequently estimated the heat evolved during the reaction c-Si+Ti-→C54-TiSi₂ as ΔH_f=-56±5 kJ/mol. Based upon this estimate, we find the enthalpy as determined from thin film samples for this system agrees with previous studies which made use of bulk sampling techniques.

Original language	English
Pages (from-to)	1488-1490
Number of pages	3
Journal	Journal of Applied Physics
Volume	82
Issue number	3
DOIs	https://doi.org/10.1063/1.365930
State	Published - Aug 1 1997

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@article{2aefe2aa6f164069a729bc2a5a9139c6,

title = "The enthalpy of formation of thin film titanium disilicide",

abstract = "Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analysis of our data we have calculated the enthalpy of formation to be ΔKf= -62±5 kJ/mol for the reaction, a-Si+Ti→C49-TiSi2 and have subsequently estimated the heat evolved during the reaction c-Si+Ti-→C54-TiSi2 as ΔHf=-56±5 kJ/mol. Based upon this estimate, we find the enthalpy as determined from thin film samples for this system agrees with previous studies which made use of bulk sampling techniques.",

author = "Kasica, \{R. J.\} and Cotts, \{E. J.\}",

year = "1997",

month = aug,

day = "1",

doi = "10.1063/1.365930",

language = "English",

volume = "82",

pages = "1488--1490",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "3",

}

TY - JOUR

T1 - The enthalpy of formation of thin film titanium disilicide

AU - Kasica, R. J.

AU - Cotts, E. J.

PY - 1997/8/1

Y1 - 1997/8/1

N2 - Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analysis of our data we have calculated the enthalpy of formation to be ΔKf= -62±5 kJ/mol for the reaction, a-Si+Ti→C49-TiSi2 and have subsequently estimated the heat evolved during the reaction c-Si+Ti-→C54-TiSi2 as ΔHf=-56±5 kJ/mol. Based upon this estimate, we find the enthalpy as determined from thin film samples for this system agrees with previous studies which made use of bulk sampling techniques.

AB - Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analysis of our data we have calculated the enthalpy of formation to be ΔKf= -62±5 kJ/mol for the reaction, a-Si+Ti→C49-TiSi2 and have subsequently estimated the heat evolved during the reaction c-Si+Ti-→C54-TiSi2 as ΔHf=-56±5 kJ/mol. Based upon this estimate, we find the enthalpy as determined from thin film samples for this system agrees with previous studies which made use of bulk sampling techniques.

UR - https://www.scopus.com/pages/publications/0008148663

U2 - 10.1063/1.365930

DO - 10.1063/1.365930

M3 - Article

SN - 0021-8979

VL - 82

SP - 1488

EP - 1490

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

The enthalpy of formation of thin film titanium disilicide

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