Skip to main navigation Skip to search Skip to main content

The quantum efficiency of photo-charge generation in a-Se avalanche photodetectors

  • A. Reznik
  • , B. J.M. Lui
  • , Y. Ohkawa
  • , T. Matsubara
  • , K. Miyakawa
  • , M. Kubota
  • , K. Tanioka
  • , T. Kawai
  • , W. Zhao
  • , J. A. Rowlands

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420-600 nm) and electric fields (10-112.5 V/μm) for several different a-Se target thicknesses (8-35 μm). An avalanche multiplication factor of 1000 is shown for a 35 μm thick a-Se layer at an electric field of 98 V/μm. The experimental results on quantum efficiency can be explained by the Onsager theory of electron-hole pair dissociation in conjunction with an electric field-induced delocalization of states.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, A
Volume567
Issue number1 SPEC. ISS.
DOIs
StatePublished - Nov 1 2006

Keywords

  • Avalanche a-Se
  • Delocalization of states
  • Onsager dissociation

Fingerprint

Dive into the research topics of 'The quantum efficiency of photo-charge generation in a-Se avalanche photodetectors'. Together they form a unique fingerprint.

Cite this