Abstract
The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420-600 nm) and electric fields (10-112.5 V/μm) for several different a-Se target thicknesses (8-35 μm). An avalanche multiplication factor of 1000 is shown for a 35 μm thick a-Se layer at an electric field of 98 V/μm. The experimental results on quantum efficiency can be explained by the Onsager theory of electron-hole pair dissociation in conjunction with an electric field-induced delocalization of states.
| Original language | English |
|---|---|
| Pages (from-to) | 93-95 |
| Number of pages | 3 |
| Journal | Nuclear Inst. and Methods in Physics Research, A |
| Volume | 567 |
| Issue number | 1 SPEC. ISS. |
| DOIs | |
| State | Published - Nov 1 2006 |
Keywords
- Avalanche a-Se
- Delocalization of states
- Onsager dissociation
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