The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

C. L. Walker; I. C. Sandall; P. M. Smowton; I. R. Sellers; D. J. Mowbray; H. Y. Liu; M. Hopkinson

doi:10.1109/LPT.2005.854393

The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

C. L. Walker
, I. C. Sandall
, P. M. Smowton
, I. R. Sellers
, D. J. Mowbray
, H. Y. Liu
, M. Hopkinson

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-μm emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 ± 2 to 3.5 ± 2 cm^-1, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.

Original language	English
Pages (from-to)	2011-2013
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2005.854393
State	Published - Oct 2005

Keywords

Optical gain
Optical loss
Quantum dots (QDs)
Semiconductor lasers

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10.1109/LPT.2005.854393

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title = "The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers",

abstract = "We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-μm emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 ± 2 to 3.5 ± 2 cm-1, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.",

keywords = "Optical gain, Optical loss, Quantum dots (QDs), Semiconductor lasers",

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T1 - The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

AU - Walker, C. L.

AU - Sandall, I. C.

AU - Smowton, P. M.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Liu, H. Y.

AU - Hopkinson, M.

PY - 2005/10

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N2 - We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-μm emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 ± 2 to 3.5 ± 2 cm-1, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.

AB - We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-μm emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 ± 2 to 3.5 ± 2 cm-1, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.

KW - Optical gain

KW - Optical loss

KW - Quantum dots (QDs)

KW - Semiconductor lasers

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DO - 10.1109/LPT.2005.854393

M3 - Article

SN - 1041-1135

VL - 17

SP - 2011

EP - 2013

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

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Keywords

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