The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

A. Tsukernik; M. Karpovski; A. Palevski; V. J. Goldman; S. Luryi; A. Rudra; E. Kapon

doi:10.1016/S1386-9477(01)00286-7

The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

A. Tsukernik
, M. Karpovski
, A. Palevski
, V. J. Goldman
, S. Luryi
, A. Rudra
, E. Kapon

Physics and Astronomy

Stony Brook University

Tel Aviv University
Stony Brook University
Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e² when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.

Original language	English
Pages (from-to)	136-139
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00286-7
State	Published - Jan 2002
Event	14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001

Keywords

2DEG
Quantum hall effect
V-grooved heterojunction

Access to Document

10.1016/S1386-9477(01)00286-7

Cite this

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title = "The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor",

abstract = "We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.",

keywords = "2DEG, Quantum hall effect, V-grooved heterojunction",

author = "A. Tsukernik and M. Karpovski and A. Palevski and Goldman, \{V. J.\} and S. Luryi and A. Rudra and E. Kapon",

year = "2002",

month = jan,

doi = "10.1016/S1386-9477(01)00286-7",

language = "English",

volume = "12",

pages = "136--139",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

}

TY - JOUR

T1 - The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

AU - Tsukernik, A.

AU - Karpovski, M.

AU - Palevski, A.

AU - Goldman, V. J.

AU - Luryi, S.

AU - Rudra, A.

AU - Kapon, E.

PY - 2002/1

Y1 - 2002/1

N2 - We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.

AB - We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.

KW - 2DEG

KW - Quantum hall effect

KW - V-grooved heterojunction

UR - https://www.scopus.com/pages/publications/0035239514

U2 - 10.1016/S1386-9477(01)00286-7

DO - 10.1016/S1386-9477(01)00286-7

M3 - Conference article

SN - 1386-9477

VL - 12

SP - 136

EP - 139

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - 14th International Conference on the

Y2 - 30 July 2001 through 3 August 2001

ER -

The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

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Keywords

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