Abstract
Ion implantation is used to introduce lead into the mineral apatite. Diffusion profiles are obtained using Rutherford backscattering (RBS) and the results fit with a model to determine D. Results for apatite over the temperature range 600-900 ° C show agreement with earlier results obtained by traditional geological techniques. This suggests that radiation damage induced by ion implantation has little effect on diffusion in this case. This approach is both simple and useful in studying diffusion over a temperature range of geologic interest without inordinate annealing times.
| Original language | English |
|---|---|
| Pages (from-to) | 230-233 |
| Number of pages | 4 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 45 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 2 1990 |
Fingerprint
Dive into the research topics of 'The use of ion beam techniques to characterize lead diffusion in minerals'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver