Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

O. Van Der Straten; Y. Zhu; E. Eisenbraun; A. Kaloyeros

doi:10.1109/IITC.2002.1014929

Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

O. Van Der Straten
, Y. Zhu
, E. Eisenbraun
, A. Kaloyeros

Nanoscale Science and Engineering

University at Albany

SUNY Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaN_x films, employing both thermal and electrical biasing, are presented and discussed.

Original language	English
Title of host publication	Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	188-190
Number of pages	3
ISBN (Electronic)	0780372166, 9780780372160
DOIs	https://doi.org/10.1109/IITC.2002.1014929
State	Published - 2002
Event	IEEE International Interconnect Technology Conference, IITC 2002 - Burlingame, United States Duration: Jun 3 2002 → Jun 5 2002

Publication series

Name	Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Conference

Conference	IEEE International Interconnect Technology Conference, IITC 2002
Country/Territory	United States
City	Burlingame
Period	06/3/02 → 06/5/02

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10.1109/IITC.2002.1014929

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Van Der Straten, O., Zhu, Y., Eisenbraun, E., & Kaloyeros, A. (2002). Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization. In Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002 (pp. 188-190). Article 1014929 (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2002.1014929

Van Der Straten, O. ; Zhu, Y. ; Eisenbraun, E. et al. / Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization. Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 188-190 (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002).

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title = "Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization",

abstract = "The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaNx films, employing both thermal and electrical biasing, are presented and discussed.",

author = "\{Van Der Straten\}, O. and Y. Zhu and E. Eisenbraun and A. Kaloyeros",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; IEEE International Interconnect Technology Conference, IITC 2002 ; Conference date: 03-06-2002 Through 05-06-2002",

year = "2002",

doi = "10.1109/IITC.2002.1014929",

language = "English",

series = "Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002",

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Van Der Straten, O, Zhu, Y, Eisenbraun, E & Kaloyeros, A 2002, Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization. in Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002., 1014929, Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 188-190, IEEE International Interconnect Technology Conference, IITC 2002, Burlingame, United States, 06/3/02. https://doi.org/10.1109/IITC.2002.1014929

Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization. / Van Der Straten, O.; Zhu, Y.; Eisenbraun, E. et al.
Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 188-190 1014929 (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

AU - Van Der Straten, O.

AU - Zhu, Y.

AU - Eisenbraun, E.

AU - Kaloyeros, A.

PY - 2002

Y1 - 2002

N2 - The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaNx films, employing both thermal and electrical biasing, are presented and discussed.

AB - The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250°C, thus enabling excellent integrability with thermally fragile dielectric systems, employs a commercial ALD reactor. Preliminary copper barrier performance results of ultrathin (6 nm) TaNx films, employing both thermal and electrical biasing, are presented and discussed.

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DO - 10.1109/IITC.2002.1014929

M3 - Conference contribution

T3 - Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

SP - 188

EP - 190

BT - Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Interconnect Technology Conference, IITC 2002

Y2 - 3 June 2002 through 5 June 2002

ER -

Van Der Straten O, Zhu Y, Eisenbraun E, Kaloyeros A. Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization. In Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 188-190. 1014929. (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002). doi: 10.1109/IITC.2002.1014929

Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

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