Thermomigration versus electromigration in microelectronics solder joints

Mohd F. Abdulhamid; Cemal Basaran; Yi Shao Lai

doi:10.1109/TADVP.2009.2018293

Thermomigration versus electromigration in microelectronics solder joints

Mohd F. Abdulhamid
, Cemal Basaran
, Yi Shao Lai

Department of Civil, Structural & Environmental Engineering

University at Buffalo

SUNY Buffalo
Advanced Semiconductor Engineering, Inc.

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Competing mechanisms of electromigration and thermomigration in flip chip SnAgCu (SAC) solder joints were studied experimentally. A daisy chain of solder joints were stressed at 2.0 × 10⁴ Amps/ cm², 2.4 × 10⁴ Amps/cm², and 2.8 × 10⁴ Amps/cm² current density levels at room temperature. In the test vehicle, some solder joints were exposed to a combination of electromigration and thermomigration, while some others were exposed to thermomigration alone. The changes in the intermetallic compound (IMC) microstructure were observed with scanning electron microscope (SEM) under thermomigration alone and when both migration processes are present. In all cases, Cu₆ Sn₅ IMC at the hot side disintegrated while at the cold side thickened. The dissolution of the IMC at the hot side and the thickening at the cold side is a result of temperature and diffusion driving forces. It is observed that thermomigration driving force, when present, is much larger than electromigration.

Original language	English
Pages (from-to)	627-635
Number of pages	9
Journal	IEEE Transactions on Advanced Packaging
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/TADVP.2009.2018293
State	Published - 2009

Keywords

Diffusion
Electromigration
Lead-free solder
Thermomigration

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10.1109/TADVP.2009.2018293

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title = "Thermomigration versus electromigration in microelectronics solder joints",

abstract = "Competing mechanisms of electromigration and thermomigration in flip chip SnAgCu (SAC) solder joints were studied experimentally. A daisy chain of solder joints were stressed at 2.0 × 104 Amps/ cm2, 2.4 × 104 Amps/cm2, and 2.8 × 104 Amps/cm2 current density levels at room temperature. In the test vehicle, some solder joints were exposed to a combination of electromigration and thermomigration, while some others were exposed to thermomigration alone. The changes in the intermetallic compound (IMC) microstructure were observed with scanning electron microscope (SEM) under thermomigration alone and when both migration processes are present. In all cases, Cu6 Sn5 IMC at the hot side disintegrated while at the cold side thickened. The dissolution of the IMC at the hot side and the thickening at the cold side is a result of temperature and diffusion driving forces. It is observed that thermomigration driving force, when present, is much larger than electromigration.",

keywords = "Diffusion, Electromigration, Lead-free solder, Thermomigration",

author = "Abdulhamid, \{Mohd F.\} and Cemal Basaran and Lai, \{Yi Shao\}",

year = "2009",

doi = "10.1109/TADVP.2009.2018293",

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volume = "32",

pages = "627--635",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - Thermomigration versus electromigration in microelectronics solder joints

AU - Abdulhamid, Mohd F.

AU - Basaran, Cemal

AU - Lai, Yi Shao

PY - 2009

Y1 - 2009

N2 - Competing mechanisms of electromigration and thermomigration in flip chip SnAgCu (SAC) solder joints were studied experimentally. A daisy chain of solder joints were stressed at 2.0 × 104 Amps/ cm2, 2.4 × 104 Amps/cm2, and 2.8 × 104 Amps/cm2 current density levels at room temperature. In the test vehicle, some solder joints were exposed to a combination of electromigration and thermomigration, while some others were exposed to thermomigration alone. The changes in the intermetallic compound (IMC) microstructure were observed with scanning electron microscope (SEM) under thermomigration alone and when both migration processes are present. In all cases, Cu6 Sn5 IMC at the hot side disintegrated while at the cold side thickened. The dissolution of the IMC at the hot side and the thickening at the cold side is a result of temperature and diffusion driving forces. It is observed that thermomigration driving force, when present, is much larger than electromigration.

AB - Competing mechanisms of electromigration and thermomigration in flip chip SnAgCu (SAC) solder joints were studied experimentally. A daisy chain of solder joints were stressed at 2.0 × 104 Amps/ cm2, 2.4 × 104 Amps/cm2, and 2.8 × 104 Amps/cm2 current density levels at room temperature. In the test vehicle, some solder joints were exposed to a combination of electromigration and thermomigration, while some others were exposed to thermomigration alone. The changes in the intermetallic compound (IMC) microstructure were observed with scanning electron microscope (SEM) under thermomigration alone and when both migration processes are present. In all cases, Cu6 Sn5 IMC at the hot side disintegrated while at the cold side thickened. The dissolution of the IMC at the hot side and the thickening at the cold side is a result of temperature and diffusion driving forces. It is observed that thermomigration driving force, when present, is much larger than electromigration.

KW - Diffusion

KW - Electromigration

KW - Lead-free solder

KW - Thermomigration

UR - https://www.scopus.com/pages/publications/68949183355

U2 - 10.1109/TADVP.2009.2018293

DO - 10.1109/TADVP.2009.2018293

M3 - Article

SN - 1521-3323

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EP - 635

JO - IEEE Transactions on Advanced Packaging

JF - IEEE Transactions on Advanced Packaging

IS - 3

ER -

Thermomigration versus electromigration in microelectronics solder joints

Abstract

Keywords

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