Tip-based nanoscale selective growth of discrete silicon nanowires by near-field laser illumination

Growth of discrete silicon nanowires is reported with nanoscale location selectivity by employing near-field laser illumination. An uncoated dielectric atomic force microscope (AFM) tip provides a nanometer-scale light source that is sufficiently localized to induce nucleation and subsequent growth of a single nanowire under its optical near-field. Far-field laser-induced heating is additionally supplied to the substrate to both relieve the required near-field light budget and also assist stable epitaxial growth. Specific catalysts are selected for the nanowire growth by non-contact mode AFM imaging. Through real-time monitoring of the deflection of the AFM cantilever during the growth process, the gap between the tip and the sample and hence truly near-field illumination are maintained throughout the growth process. The study shows that tip-based near-field laser illumination could be an effective tool for the direct integration of semiconductor nanowires.