Torsion based universal MEMS logic device

Saad Ilyas; Arpys Arevalo; Ernesto Bayes; Ian G. Foulds; Mohammad I. Younis

doi:10.1016/j.sna.2015.10.039

Torsion based universal MEMS logic device

Saad Ilyas
, Arpys Arevalo
, Ernesto Bayes
, Ian G. Foulds
, Mohammad I. Younis

Mechanical Engineering

Binghamton University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

Original language	English
Pages (from-to)	150-158
Number of pages	9
Journal	Sensors and Actuators, A: Physical
Volume	236
DOIs	https://doi.org/10.1016/j.sna.2015.10.039
State	Published - Dec 1 2015

Keywords

Logic device
Micromirror
Polyimide

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10.1016/j.sna.2015.10.039

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abstract = "In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.",

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AU - Ilyas, Saad

AU - Arevalo, Arpys

AU - Bayes, Ernesto

AU - Foulds, Ian G.

AU - Younis, Mohammad I.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

AB - In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

KW - Logic device

KW - Micromirror

KW - Polyimide

UR - https://www.scopus.com/pages/publications/84946615346

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JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

ER -

Torsion based universal MEMS logic device

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Keywords

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