Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

Tara Dhakal; Abhishek S. Nandur; Rachel Christian; Parag Vasekar; Seshu Desu; Charles Westgate; D. I. Koukis; D. J. Arenas; D. B. Tanner

doi:10.1016/j.solener.2012.01.022

Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

Tara Dhakal
, Abhishek S. Nandur
, Rachel Christian
, Parag Vasekar
, Seshu Desu
, Charles Westgate
, D. I. Koukis
, D. J. Arenas
, D. B. Tanner

Electrical and Computer Eng

Binghamton University

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The results show that the films have 80-90% transmittance in the visible region and good transmittance in the infrared. To our knowledge, this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500-5000nm. Following annealing, an optimal sheet resistance of 25Ω/□ was obtained for a 575nm thick film with a carrier density of 2.4×10 ²⁰cm ^-3 without compromising the transmittance in the visible regime.

Original language	English
Pages (from-to)	1306-1312
Number of pages	7
Journal	Solar Energy
Volume	86
Issue number	5
DOIs	https://doi.org/10.1016/j.solener.2012.01.022
State	Published - May 2012

Keywords

Aluminum-doped zinc oxide
Atomic Layer Deposition
IR transmittance
Transmittance of AZO
Transparent conducting oxide

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10.1016/j.solener.2012.01.022

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title = "Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system",

abstract = "We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The results show that the films have 80-90\% transmittance in the visible region and good transmittance in the infrared. To our knowledge, this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500-5000nm. Following annealing, an optimal sheet resistance of 25Ω/□ was obtained for a 575nm thick film with a carrier density of 2.4×10 20cm -3 without compromising the transmittance in the visible regime.",

keywords = "Aluminum-doped zinc oxide, Atomic Layer Deposition, IR transmittance, Transmittance of AZO, Transparent conducting oxide",

author = "Tara Dhakal and Nandur, \{Abhishek S.\} and Rachel Christian and Parag Vasekar and Seshu Desu and Charles Westgate and Koukis, \{D. I.\} and Arenas, \{D. J.\} and Tanner, \{D. B.\}",

year = "2012",

month = may,

doi = "10.1016/j.solener.2012.01.022",

language = "English",

volume = "86",

pages = "1306--1312",

journal = "Solar Energy",

issn = "0038-092X",

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TY - JOUR

T1 - Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

AU - Dhakal, Tara

AU - Nandur, Abhishek S.

AU - Christian, Rachel

AU - Vasekar, Parag

AU - Desu, Seshu

AU - Westgate, Charles

AU - Koukis, D. I.

AU - Arenas, D. J.

AU - Tanner, D. B.

PY - 2012/5

Y1 - 2012/5

N2 - We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The results show that the films have 80-90% transmittance in the visible region and good transmittance in the infrared. To our knowledge, this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500-5000nm. Following annealing, an optimal sheet resistance of 25Ω/□ was obtained for a 575nm thick film with a carrier density of 2.4×10 20cm -3 without compromising the transmittance in the visible regime.

AB - We report transmittance and conductivity measurements of aluminum-doped zinc oxide films grown by atomic layer deposition. The results show that the films have 80-90% transmittance in the visible region and good transmittance in the infrared. To our knowledge, this is the first time that the transmittance of aluminum-doped zinc oxide is reported to extend beyond 2500-5000nm. Following annealing, an optimal sheet resistance of 25Ω/□ was obtained for a 575nm thick film with a carrier density of 2.4×10 20cm -3 without compromising the transmittance in the visible regime.

KW - Aluminum-doped zinc oxide

KW - Atomic Layer Deposition

KW - IR transmittance

KW - Transmittance of AZO

KW - Transparent conducting oxide

UR - https://www.scopus.com/pages/publications/84859445741

U2 - 10.1016/j.solener.2012.01.022

DO - 10.1016/j.solener.2012.01.022

M3 - Article

SN - 0038-092X

VL - 86

SP - 1306

EP - 1312

JO - Solar Energy

JF - Solar Energy

IS - 5

ER -

Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

Abstract

Keywords

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