Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya; Jonathan P. Bird; David K. Ferry; Kee Youn Jang; Mutsuo Ogura; Yoshinobu Sugiyama

doi:10.1116/1.1456519

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya
, Jonathan P. Bird
, David K. Ferry
, Kee Youn Jang
, Mutsuo Ogura
, Yoshinobu Sugiyama

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

Original language	English
Pages (from-to)	1192-1195
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1456519
State	Published - May 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

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Sugaya, T., Bird, J. P., Ferry, D. K., Jang, K. Y., Ogura, M., & Sugiyama, Y. (2002). Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1192-1195. https://doi.org/10.1116/1.1456519

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title = "Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy",

abstract = "InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.",

author = "Takeyoshi Sugaya and Bird, \{Jonathan P.\} and Ferry, \{David K.\} and Jang, \{Kee Youn\} and Mutsuo Ogura and Yoshinobu Sugiyama",

year = "2002",

month = may,

doi = "10.1116/1.1456519",

language = "English",

volume = "20",

pages = "1192--1195",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

}

Sugaya, T, Bird, JP, Ferry, DK, Jang, KY, Ogura, M & Sugiyama, Y 2002, 'Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, pp. 1192-1195. https://doi.org/10.1116/1.1456519

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. / Sugaya, Takeyoshi; Bird, Jonathan P.; Ferry, David K. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1192-1195.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

AU - Sugaya, Takeyoshi

AU - Bird, Jonathan P.

AU - Ferry, David K.

AU - Jang, Kee Youn

AU - Ogura, Mutsuo

AU - Sugiyama, Yoshinobu

PY - 2002/5

Y1 - 2002/5

N2 - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

AB - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

UR - https://www.scopus.com/pages/publications/0035998592

U2 - 10.1116/1.1456519

DO - 10.1116/1.1456519

M3 - Conference article

SN - 1071-1023

VL - 20

SP - 1192

EP - 1195

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

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