Abstract
Characteristics of GaSb-based lasers operated at 2.5, 2.7 and 2.8μm with CW output power of 1W, 500mW and 160mW are presented. Trends of the design improvement are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 274-275 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| State | Published - 2003 |
| Event | 2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003 |
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