TY - GEN
T1 - Tuning of Copper Grain Sizes for Integration in Hybrid Bonding Applications
AU - Singh, Sarabjot
AU - Dunn, Kathleen
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The microstructure of Cu plays a crucial role in the formation of Cu-to-Cu metal bonds during the hybrid bonding process. This study demonstrates that controlling the grain size of copper films through varying concentrations of trisodium citrate, a grain size growth inhibitor agent during electrodeposition offers a significant advancement in tailoring material properties for specific applications. Higher citrate concentrations result in smaller grain sizes, which enhance mechanical properties such as hardness and yield stress, making these films ideal for low-temperature bonding and applications requiring robust mechanical strength. For instance, a copper film with a 9 nm grain size exhibited superior hardness (3.59 GPa) and yield stress (1.42 GPa) in the as-deposited state. However, the increased grain boundary area in finer grains also leads to higher electrical resistance, which is a disadvantage for applications requiring high electrical conductivity. Conversely, lower citrate concentrations produce larger grain sizes, which reduce electrical resistance due to fewer grain boundaries, thus improving electrical performance but at the cost of inferior mechanical properties, as observed in a standard copper film deposited without any citrate content with a 273 nm grain size having lower hardness (2.42 GPa) and yield stress (1.06 GPa). This tunable grain size approach via citrate-based chemistry provides a versatile solution to balance and optimize the mechanical and electrical properties of copper films, allowing adaptability based on the specific requirements of various technological applications.
AB - The microstructure of Cu plays a crucial role in the formation of Cu-to-Cu metal bonds during the hybrid bonding process. This study demonstrates that controlling the grain size of copper films through varying concentrations of trisodium citrate, a grain size growth inhibitor agent during electrodeposition offers a significant advancement in tailoring material properties for specific applications. Higher citrate concentrations result in smaller grain sizes, which enhance mechanical properties such as hardness and yield stress, making these films ideal for low-temperature bonding and applications requiring robust mechanical strength. For instance, a copper film with a 9 nm grain size exhibited superior hardness (3.59 GPa) and yield stress (1.42 GPa) in the as-deposited state. However, the increased grain boundary area in finer grains also leads to higher electrical resistance, which is a disadvantage for applications requiring high electrical conductivity. Conversely, lower citrate concentrations produce larger grain sizes, which reduce electrical resistance due to fewer grain boundaries, thus improving electrical performance but at the cost of inferior mechanical properties, as observed in a standard copper film deposited without any citrate content with a 273 nm grain size having lower hardness (2.42 GPa) and yield stress (1.06 GPa). This tunable grain size approach via citrate-based chemistry provides a versatile solution to balance and optimize the mechanical and electrical properties of copper films, allowing adaptability based on the specific requirements of various technological applications.
KW - Cu thin films
KW - Electrodeposition
KW - grain growth inhibitor
KW - hybrid bonding
KW - microstructure
UR - https://www.scopus.com/pages/publications/85208107743
U2 - 10.1109/ESTC60143.2024.10712147
DO - 10.1109/ESTC60143.2024.10712147
M3 - Conference contribution
T3 - 2024 IEEE 10th Electronics System-Integration Technology Conference, ESTC 2024 - Proceedings
BT - 2024 IEEE 10th Electronics System-Integration Technology Conference, ESTC 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th IEEE Electronics System-Integration Technology Conference, ESTC 2024
Y2 - 11 September 2024 through 13 September 2024
ER -