Two-dimensional quantum states in multi-heterostructures of three constituents

E. E. Mendez; L. L. Chang; L. Esaki

doi:10.1016/0039-6028(82)90634-3

Two-dimensional quantum states in multi-heterostructures of three constituents

E. E. Mendez
, L. L. Chang
, L. Esaki

Physics and Astronomy

Stony Brook University

IBM

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition.

Original language	English
Pages (from-to)	474-478
Number of pages	5
Journal	Surface Science
Volume	113
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(82)90634-3
State	Published - Jan 1 1982

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abstract = "A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition.",

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AU - Chang, L. L.

AU - Esaki, L.

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N2 - A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition.

AB - A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition.

UR - https://www.scopus.com/pages/publications/0009315473

U2 - 10.1016/0039-6028(82)90634-3

DO - 10.1016/0039-6028(82)90634-3

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JO - Surface Science

JF - Surface Science

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ER -

Two-dimensional quantum states in multi-heterostructures of three constituents

Abstract

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