Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range

Takashi Hosoda; Gela Kipshidze; Gene Tsvid; Leon Shterengas; Gregory Belenky

doi:10.1109/LPT.2010.2044659

Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range

Takashi Hosoda
, Gela Kipshidze
, Gene Tsvid
, Leon Shterengas
, Gregory Belenky

Electrical Engineering

Stony Brook University

Stony Brook University

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Type-I quantum-well (QW) diode lasers based on AlInGaAsSbInGaAsSbAlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μ correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QW_s by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.

Original language	English
Article number	5430922
Pages (from-to)	718-720
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2010.2044659
State	Published - 2010

Keywords

Diode laser
GaSb
Midinfrared
Type-I

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10.1109/LPT.2010.2044659

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@article{746e90ca37a7405986e38dfd78aefa65,

title = "Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range",

abstract = "Type-I quantum-well (QW) diode lasers based on AlInGaAsSbInGaAsSbAlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μ correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32\% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.",

keywords = "Diode laser, GaSb, Midinfrared, Type-I",

author = "Takashi Hosoda and Gela Kipshidze and Gene Tsvid and Leon Shterengas and Gregory Belenky",

year = "2010",

doi = "10.1109/LPT.2010.2044659",

language = "English",

volume = "22",

pages = "718--720",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range

AU - Hosoda, Takashi

AU - Kipshidze, Gela

AU - Tsvid, Gene

AU - Shterengas, Leon

AU - Belenky, Gregory

PY - 2010

Y1 - 2010

N2 - Type-I quantum-well (QW) diode lasers based on AlInGaAsSbInGaAsSbAlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μ correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.

AB - Type-I quantum-well (QW) diode lasers based on AlInGaAsSbInGaAsSbAlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μ correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.

KW - Diode laser

KW - GaSb

KW - Midinfrared

KW - Type-I

UR - https://www.scopus.com/pages/publications/77951729683

U2 - 10.1109/LPT.2010.2044659

DO - 10.1109/LPT.2010.2044659

M3 - Article

SN - 1041-1135

VL - 22

SP - 718

EP - 720

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

M1 - 5430922

ER -

Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range

Abstract

Keywords

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