Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

D. Sarigiannis; T. J. Mountziaris; G. Kioseoglou; A. Petrou

Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

D. Sarigiannis
, T. J. Mountziaris
, G. Kioseoglou
, A. Petrou

Physics

University at Buffalo

SUNY Buffalo

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH₃)₂Zn:[N(C₂H₅)₃]₃ and H₂Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems.

Original language	English
Pages	321-326
Number of pages	6
State	Published - 2000
Event	27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: Oct 2 2000 → Oct 5 2000

Conference

Conference	27th International Symposium on Compound Semiconductors
Country/Territory	United States
City	Monterey, CA
Period	10/2/00 → 10/5/00

Cite this

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title = "Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor",

abstract = "This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems.",

author = "D. Sarigiannis and Mountziaris, \{T. J.\} and G. Kioseoglou and A. Petrou",

year = "2000",

language = "English",

pages = "321--326",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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TY - CONF

T1 - Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

AU - Sarigiannis, D.

AU - Mountziaris, T. J.

AU - Kioseoglou, G.

AU - Petrou, A.

PY - 2000

Y1 - 2000

N2 - This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems.

AB - This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems.

UR - https://www.scopus.com/pages/publications/0034424731

M3 - Paper

SP - 321

EP - 326

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

Abstract

Conference

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