TY - GEN
T1 - Verilog-A based compact modeling of -The magneto-electric FET device
AU - Sharma, Nishtha
AU - Marshall, Andrew
AU - Bird, Jonathan
AU - Dowben, Peter
N1 - Publisher Copyright: © 2017 IEEE.
PY - 2017/6/28
Y1 - 2017/6/28
N2 - The first spin transistor was proposed by Das and Datta in 1990 [1]. Since -Then, -There has been a lot of active research on -The spin based transistors in -The academia and industry. The device structure resembles a CMOS transistor with -The source and drain acting as a spin polarizer and spin detector respectively. The voltage applied across -The gate controls -The spin precession in -The channel through electric field generated by spin orbit dependent Rashba effect. This results in magnitude change of -The drain to source (IDS) current which represents -The state variable of -The device. Previously, Verilog-A based models have been proposed for -The Rashba effect based SpinFET transistors [2-3]. Unfortunately, -The Rashba effect is weak making it difficult for -The realization of an effective room temperature Datta-Das transistor.
AB - The first spin transistor was proposed by Das and Datta in 1990 [1]. Since -Then, -There has been a lot of active research on -The spin based transistors in -The academia and industry. The device structure resembles a CMOS transistor with -The source and drain acting as a spin polarizer and spin detector respectively. The voltage applied across -The gate controls -The spin precession in -The channel through electric field generated by spin orbit dependent Rashba effect. This results in magnitude change of -The drain to source (IDS) current which represents -The state variable of -The device. Previously, Verilog-A based models have been proposed for -The Rashba effect based SpinFET transistors [2-3]. Unfortunately, -The Rashba effect is weak making it difficult for -The realization of an effective room temperature Datta-Das transistor.
UR - https://www.scopus.com/pages/publications/85045988922
U2 - 10.1109/E3S.2017.8246186
DO - 10.1109/E3S.2017.8246186
M3 - Conference contribution
T3 - 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
SP - 1
EP - 3
BT - 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017
Y2 - 19 October 2017 through 20 October 2017
ER -