Skip to main navigation Skip to search Skip to main content

Voltage binning under process variation

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Scopus citations

Abstract

Process variation is recognized as a major source of parametric yield loss, which occurs because a fraction of manufactured chips do not satisfy timing or power constraints. On the other hand, both chip performance and chip leakage power depend on supply voltage. This dependence can be used for converting the fraction of too slow or too leaky chips into good ones by adjusting their supply voltage. This technique is called voltage binning [4]. All the manufactured chips are divided into groups (bins) and each group is assigned its individual supply voltage. This paper proposes a statistical technique of yield computation for different voltage binning schemes using results of statistical timing and variational power analysis. The paper formulates and solves the problem of computing optimal supply voltages for a given binning scheme.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages425-432
Number of pages8
ISBN (Print)9781605588001
DOIs
StatePublished - 2009
Event2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009 - San Jose, CA, United States
Duration: Nov 2 2009Nov 5 2009

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Conference

Conference2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009
Country/TerritoryUnited States
CitySan Jose, CA
Period11/2/0911/5/09

Keywords

  • Leakage current
  • Parametric yield
  • Voltage binning

Fingerprint

Dive into the research topics of 'Voltage binning under process variation'. Together they form a unique fingerprint.

Cite this