Volterra series simulations of RF intermodulation characteristics of SiGe HBT's

Guofu Niu; J. D. Cressler; C. S. Webster; A. J. Joseph; D. L. Harame

doi:10.1109/SMIC.2000.844318

Volterra series simulations of RF intermodulation characteristics of SiGe HBT's

Guofu Niu
, J. D. Cressler
, C. S. Webster
, A. J. Joseph
, D. L. Harame

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.

Original language	English
Title of host publication	2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Editors	Walter Fisch, George E. Ponchak
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	142-146
Number of pages	5
ISBN (Electronic)	0780362551, 9780780362550
DOIs	https://doi.org/10.1109/SMIC.2000.844318
State	Published - 2000
Event	2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000 - Garmisch, Germany Duration: Apr 28 2000 → …

Publication series

Name	2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Conference

Conference	2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000
Country/Territory	Germany
City	Garmisch
Period	04/28/00 → …

Access to Document

10.1109/SMIC.2000.844318

Cite this

Niu, G., Cressler, J. D., Webster, C. S., Joseph, A. J., & Harame, D. L. (2000). Volterra series simulations of RF intermodulation characteristics of SiGe HBT's. In W. Fisch, & G. E. Ponchak (Eds.), 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 142-146). Article 844318 (2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2000.844318

Niu, Guofu ; Cressler, J. D. ; Webster, C. S. et al. / Volterra series simulations of RF intermodulation characteristics of SiGe HBT's. 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. editor / Walter Fisch ; George E. Ponchak. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 142-146 (2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

@inproceedings{be7060cfc2754bcab552011676a2602f,

title = "Volterra series simulations of RF intermodulation characteristics of SiGe HBT's",

abstract = "A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.",

author = "Guofu Niu and Cressler, \{J. D.\} and Webster, \{C. S.\} and Joseph, \{A. J.\} and Harame, \{D. L.\}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000 ; Conference date: 28-04-2000",

year = "2000",

doi = "10.1109/SMIC.2000.844318",

language = "English",

series = "2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "142--146",

editor = "Walter Fisch and Ponchak, \{George E.\}",

booktitle = "2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

}

Niu, G, Cressler, JD, Webster, CS, Joseph, AJ & Harame, DL 2000, Volterra series simulations of RF intermodulation characteristics of SiGe HBT's. in W Fisch & GE Ponchak (eds), 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 844318, 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Institute of Electrical and Electronics Engineers Inc., pp. 142-146, 2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000, Garmisch, Germany, 04/28/00. https://doi.org/10.1109/SMIC.2000.844318

Volterra series simulations of RF intermodulation characteristics of SiGe HBT's. / Niu, Guofu; Cressler, J. D.; Webster, C. S. et al.
2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. ed. / Walter Fisch; George E. Ponchak. Institute of Electrical and Electronics Engineers Inc., 2000. p. 142-146 844318 (2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Volterra series simulations of RF intermodulation characteristics of SiGe HBT's

AU - Niu, Guofu

AU - Cressler, J. D.

AU - Webster, C. S.

AU - Joseph, A. J.

AU - Harame, D. L.

PY - 2000

Y1 - 2000

N2 - A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.

AB - A systematic analysis of two-tone intermodulation in UHV/CVD SiGe HBT's is performed using the Volterra series approach. The impact of source and load impedance, frequency, tone-spacing, and CB feedback are examined. The contribution of each individual nonlinearity is identified, and the interaction (cancellation or enhancement) among the nonlinearities is shown to be a function of bias current, load condition, tone-spacing and CB feedback capacitance.

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DO - 10.1109/SMIC.2000.844318

M3 - Conference contribution

T3 - 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

SP - 142

EP - 146

BT - 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

A2 - Fisch, Walter

A2 - Ponchak, George E.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000

Y2 - 28 April 2000

ER -

Niu G, Cressler JD, Webster CS, Joseph AJ, Harame DL. Volterra series simulations of RF intermodulation characteristics of SiGe HBT's. In Fisch W, Ponchak GE, editors, 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 142-146. 844318. (2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). doi: 10.1109/SMIC.2000.844318

Volterra series simulations of RF intermodulation characteristics of SiGe HBT's

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