TY - GEN
T1 - Wafer level encapsulation of micromachined pressure sensors to realize a liquid flow sensor
AU - Shakir, Ali
AU - Srihari, Krishnaswami
AU - Murcko, Bob
AU - Yun, Changhan
AU - Sulouff, Bob
PY - 2008
Y1 - 2008
N2 - A differential pressure flow sensor capable of measuring low flow rates 0.01 ml/hr to 100 ml/hr has been developed, using wafer level encapsulation. Glass frit was used as the bonding material to bond the cap and device wafers. The flow channel was created by combination of seal glass material and etch step carried out in the cap wafer fabrication process. This paper summarizes the research work carried out to realize a flow sensor with multiple sensing capabilities by utilizing the wafer level bonding technology. The realization of the flow channel was carried out in two phases in order to create a more uniform rectangular channel compared to the initial phase. This research activity demonstrates a very simple cap fabrication process that enabled the realization of a flow sensor with multiple sensing capabilities. Surface micromachined process was employed to fabricate the pressure sensors as well as the cap that defines the fluid channel. The flow sensor developed was capable of measuring flow rate, fluid type, fluid pressure, fluid presence, and flow direction. The sensor was configured in a way to successfully demonstrate two differential pressure sensing modes (i.e. sensors within the cavity and sensors in the flow channel). Both flow rate and viscosity measurements are based on the differential pressure sensing principle. Fluid presence is determined using an interdigitated structure which can also sense the fluid type based on permittivity of the fluid. The flow rate measured successfully has been as low as 0.01 ml/hr and showed very good linearity when compared to the theoretical model. The diameter of the pressure diaphragm utilized was as low as 100 microns and depends on the flow rate required to measure. The height and width of the fluidic channel realized was 12 microns and 380 microns respectively.
AB - A differential pressure flow sensor capable of measuring low flow rates 0.01 ml/hr to 100 ml/hr has been developed, using wafer level encapsulation. Glass frit was used as the bonding material to bond the cap and device wafers. The flow channel was created by combination of seal glass material and etch step carried out in the cap wafer fabrication process. This paper summarizes the research work carried out to realize a flow sensor with multiple sensing capabilities by utilizing the wafer level bonding technology. The realization of the flow channel was carried out in two phases in order to create a more uniform rectangular channel compared to the initial phase. This research activity demonstrates a very simple cap fabrication process that enabled the realization of a flow sensor with multiple sensing capabilities. Surface micromachined process was employed to fabricate the pressure sensors as well as the cap that defines the fluid channel. The flow sensor developed was capable of measuring flow rate, fluid type, fluid pressure, fluid presence, and flow direction. The sensor was configured in a way to successfully demonstrate two differential pressure sensing modes (i.e. sensors within the cavity and sensors in the flow channel). Both flow rate and viscosity measurements are based on the differential pressure sensing principle. Fluid presence is determined using an interdigitated structure which can also sense the fluid type based on permittivity of the fluid. The flow rate measured successfully has been as low as 0.01 ml/hr and showed very good linearity when compared to the theoretical model. The diameter of the pressure diaphragm utilized was as low as 100 microns and depends on the flow rate required to measure. The height and width of the fluidic channel realized was 12 microns and 380 microns respectively.
UR - https://www.scopus.com/pages/publications/84876947611
M3 - Conference contribution
SN - 0930815866
SN - 9780930815868
T3 - Proceedings - 2008 International Symposium on Microelectronics, IMAPS 2008
SP - 729
EP - 736
BT - Proceedings - 2008 International Symposium on Microelectronics, IMAPS 2008
T2 - 41st Annual International Symposium on Microelectronics, IMAPS 2008
Y2 - 2 November 2008 through 6 November 2008
ER -