Abstract
The low temperature magneto-resistance of quasi-ballistic, corrugated quantum wires has been studied. In the region near zero magnetic field, the magneto-resistance exhibits a series of clear oscillations which simulations reveal to be associated with multiple backscattering of electrons from the intentionally induced gate corrugation. This backscattering, in turn, gives rise to a strong scarring of the probability density in the wire, the details of which are easily related to classical scattering trajectories within it.
| Original language | English |
|---|---|
| Pages (from-to) | 1125-1130 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 42 |
| Issue number | 7-8 |
| DOIs | |
| State | Published - 1998 |
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