Wavelength dependence of carbon contamination on mirrors with different capping layers

Petros Thomas; Leonid Yankulin; Yashdeep Khopkar; Rashi Garg; Chimaobi Mbanaso; Alin Antohe; Yu Jen Fan; Gregory Denbeaux; Samir Aouadi; Vibhu Jindal; Andrea Wüest

doi:10.1117/12.847015

Wavelength dependence of carbon contamination on mirrors with different capping layers

Petros Thomas
, Leonid Yankulin
, Yashdeep Khopkar
, Rashi Garg
, Chimaobi Mbanaso
, Alin Antohe
, Yu Jen Fan
, Gregory Denbeaux
, Samir Aouadi
, Vibhu Jindal
, Andrea Wüest

Nanoscale Science and Engineering

University at Albany

SUNY Albany
Southern Illinois University
SEMATECH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contamination on a Ru-capped mirror. These results are compared to contamination rates on TiO₂ and ZrO₂ capping layers.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography
DOIs	https://doi.org/10.1117/12.847015
State	Published - 2010
Event	Extreme Ultraviolet (EUV) Lithography - San Jose, CA, United States Duration: Feb 22 2010 → Feb 25 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7636

Conference

Conference	Extreme Ultraviolet (EUV) Lithography
Country/Territory	United States
City	San Jose, CA
Period	02/22/10 → 02/25/10

Keywords

EUV Lithography
Ruthinium
TiO
ZrO
capping layers
carbon contamination
wavelength dependence of contamination

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10.1117/12.847015

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Thomas, P., Yankulin, L., Khopkar, Y., Garg, R., Mbanaso, C., Antohe, A., Fan, Y. J., Denbeaux, G., Aouadi, S., Jindal, V., & Wüest, A. (2010). Wavelength dependence of carbon contamination on mirrors with different capping layers. In Extreme Ultraviolet (EUV) Lithography Article 76361X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7636). https://doi.org/10.1117/12.847015

@inproceedings{ae798a68e9d146d79a3ec4c5f68c8940,

title = "Wavelength dependence of carbon contamination on mirrors with different capping layers",

abstract = "Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contamination on a Ru-capped mirror. These results are compared to contamination rates on TiO2 and ZrO2 capping layers.",

keywords = "EUV Lithography, Ruthinium, TiO, ZrO, capping layers, carbon contamination, wavelength dependence of contamination",

author = "Petros Thomas and Leonid Yankulin and Yashdeep Khopkar and Rashi Garg and Chimaobi Mbanaso and Alin Antohe and Fan, \{Yu Jen\} and Gregory Denbeaux and Samir Aouadi and Vibhu Jindal and Andrea W{\"u}est",

year = "2010",

doi = "10.1117/12.847015",

language = "English",

isbn = "9780819480507",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Extreme Ultraviolet (EUV) Lithography",

note = "Extreme Ultraviolet (EUV) Lithography ; Conference date: 22-02-2010 Through 25-02-2010",

}

Thomas, P, Yankulin, L, Khopkar, Y, Garg, R, Mbanaso, C, Antohe, A, Fan, YJ, Denbeaux, G, Aouadi, S, Jindal, V & Wüest, A 2010, Wavelength dependence of carbon contamination on mirrors with different capping layers. in Extreme Ultraviolet (EUV) Lithography., 76361X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7636, Extreme Ultraviolet (EUV) Lithography, San Jose, CA, United States, 02/22/10. https://doi.org/10.1117/12.847015

Wavelength dependence of carbon contamination on mirrors with different capping layers. / Thomas, Petros; Yankulin, Leonid; Khopkar, Yashdeep et al.
Extreme Ultraviolet (EUV) Lithography. 2010. 76361X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7636).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Wavelength dependence of carbon contamination on mirrors with different capping layers

AU - Thomas, Petros

AU - Yankulin, Leonid

AU - Khopkar, Yashdeep

AU - Garg, Rashi

AU - Mbanaso, Chimaobi

AU - Antohe, Alin

AU - Fan, Yu Jen

AU - Denbeaux, Gregory

AU - Aouadi, Samir

AU - Jindal, Vibhu

AU - Wüest, Andrea

PY - 2010

Y1 - 2010

N2 - Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contamination on a Ru-capped mirror. These results are compared to contamination rates on TiO2 and ZrO2 capping layers.

AB - Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contamination on a Ru-capped mirror. These results are compared to contamination rates on TiO2 and ZrO2 capping layers.

KW - EUV Lithography

KW - Ruthinium

KW - TiO

KW - ZrO

KW - capping layers

KW - carbon contamination

KW - wavelength dependence of contamination

UR - https://www.scopus.com/pages/publications/77953393078

U2 - 10.1117/12.847015

DO - 10.1117/12.847015

M3 - Conference contribution

SN - 9780819480507

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Extreme Ultraviolet (EUV) Lithography

T2 - Extreme Ultraviolet (EUV) Lithography

Y2 - 22 February 2010 through 25 February 2010

ER -

Wavelength dependence of carbon contamination on mirrors with different capping layers

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Keywords

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