Abstract
Present-day multimedia strongly relies on re-writable phase-change optical memories. We find that, different from current consensus Ge2Sb 2Te5 (GST), the material of choice in digital versatile discs-random access memory (DVD-RAM), possesses a structure similar to ferroelectric GeTe, namely that Ge and Sb atoms are located off-center giving rise to a net dipole moment. Amorphisation of both GeTe and GST results in a significant shortening of covalent bonds and a decrease in the mean-square relative displacement concomitant with a drastic change in the short-range order. We demonstrate that the order-disorder transition in GeTe and GST is primarily due to a flip of Ge atoms from an octahedral position into a tetrahedral position without rupture of strong covalent bonds. It is this nature of the transformation that ensures large changes in reflectivity, fast disk performance and repeatable switching over millions cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 3345-3349 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 44 |
| Issue number | 5 B |
| DOIs | |
| State | Published - May 2005 |
Keywords
- Armorphous-to-crystalline transition
- Local structure
- X-ray absorptionlihe structure (XAFS)
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