Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Sébastien Pecqueur; Anna Maltenberger; Marina A. Petrukhina; Marcus Halik; Arndt Jaeger; Dominik Pentlehner; Günter Schmid

doi:10.1002/anie.201601926

Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Sébastien Pecqueur
, Anna Maltenberger
, Marina A. Petrukhina
, Marcus Halik
, Arndt Jaeger
, Dominik Pentlehner
, Günter Schmid

Chemistry

University at Albany

Siemens
Friedrich-Alexander University Erlangen-Nürnberg
Institute of Electronic Microelectronics and Nanotechnology
Osram Oled GmbH
University of Applied Science at Esslingen

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

Original language	English
Pages (from-to)	10493-10497
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	55
Issue number	35
DOIs	https://doi.org/10.1002/anie.201601926
State	Published - Aug 22 2016

Keywords

OLEDs
bismuth
donor–acceptor systems
doping
organic electronics

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10.1002/anie.201601926

Cite this

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title = "Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications",

abstract = "Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.",

keywords = "OLEDs, bismuth, donor–acceptor systems, doping, organic electronics",

author = "S{\'e}bastien Pecqueur and Anna Maltenberger and Petrukhina, \{Marina A.\} and Marcus Halik and Arndt Jaeger and Dominik Pentlehner and G{\"u}nter Schmid",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2016",

month = aug,

day = "22",

doi = "10.1002/anie.201601926",

language = "English",

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journal = "Angewandte Chemie - International Edition",

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T1 - Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

AU - Pecqueur, Sébastien

AU - Maltenberger, Anna

AU - Petrukhina, Marina A.

AU - Halik, Marcus

AU - Jaeger, Arndt

AU - Pentlehner, Dominik

AU - Schmid, Günter

PY - 2016/8/22

Y1 - 2016/8/22

N2 - Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

AB - Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

KW - OLEDs

KW - bismuth

KW - donor–acceptor systems

KW - doping

KW - organic electronics

UR - https://www.scopus.com/pages/publications/84978832089

U2 - 10.1002/anie.201601926

DO - 10.1002/anie.201601926

M3 - Article

SN - 1433-7851

VL - 55

SP - 10493

EP - 10497

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 35

ER -

Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Abstract

Keywords

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