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Wide band gap semiconductor technology for energy efficiency

  • Anant Agarwal
  • , Woongje Sung
  • , Laura Marlino
  • , Pawel Gradzki
  • , John Muth
  • , Robert Ivester
  • , Nick Justice

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations

Abstract

The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realize DOEs core missions of more efficient energy generation, greenhouse gas reduction and energy security within the U.S. This paper discusses currently funded activities and application areas that are suitable for WBG introduction. A detailed cost roadmap for SiC device introduction is also presented.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages797-802
Number of pages6
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858

Conference

Conference16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/TerritoryItaly
CitySicily
Period10/4/1510/9/15

Keywords

  • Cost of SiC
  • Fabless foundry
  • GaN
  • PowerAmerica
  • Renewable energy
  • SiC
  • Wide band gap
  • Workforce development

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